We fabricate back-gated field effect transistors using niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10(-4) mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.
|Titolo:||Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics|
|Data di pubblicazione:||2015|
|Appare nelle tipologie:||1.1.1 Articolo su rivista con DOI|