We fabricate back-gated field effect transistors using niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10(-4) mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics

DI BARTOLOMEO, Antonio
Writing – Original Draft Preparation
;
GIUBILEO, Filippo
Investigation
;
ROMEO, FRANCESCO
Formal Analysis
;
SABATINO, PAOLO
Investigation
;
CARAPELLA, Giovanni
Investigation
;
IEMMO, LAURA
Investigation
;
2015-01-01

Abstract

We fabricate back-gated field effect transistors using niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10(-4) mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4652666
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