We fabricate back-gated field effect transistors using niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10(-4) mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.
Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics
DI BARTOLOMEO, Antonio
Writing – Original Draft Preparation
;GIUBILEO, FilippoInvestigation
;ROMEO, FRANCESCOFormal Analysis
;SABATINO, PAOLOInvestigation
;CARAPELLA, GiovanniInvestigation
;IEMMO, LAURAInvestigation
;
2015
Abstract
We fabricate back-gated field effect transistors using niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10(-4) mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.File in questo prodotto:
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