Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC

Hürner, A; DI BENEDETTO, Luigi; Erlbacher, T.; Mitlehner, H.; Bauer, A. J.; Frey, L.

doi:10.4028/www.scientific.net/MSF.821-823.656

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In this study, a robust double-ring junction-termination-extension (DR-JTE) for highvoltage pn-diodes is presented and analyzed using numerical simulations. As figured out, the DRJTE reduces the electrical field at both, the edge of the single-JTE region and the mesa-transition, respectively. Thereby, due to the reduction of the electrical field, the maximum breakdown voltage is increased to 91.5% of the theoretical, parallel-plane breakdown voltage of 6.5 kV and the maximum acceptable deviation of the optimum implantation dose is twice than that of the single- JTE structure. Furthermore, due to the internal ring, the mesa-transition is shielded from the electrical field and therefore the breakdown voltage is much less affected by the angle of the mesa.

Titolo:	Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC
Autori:	Hürner, A DI BENEDETTO, Luigi Erlbacher, T. Mitlehner, H. Bauer, A. J. Frey, L. mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2015
Abstract:	In this study, a robust double-ring junction-termination-extension (DR-JTE) for highvoltage pn-diodes is presented and analyzed using numerical simulations. As figured out, the DRJTE reduces the electrical field at both, the edge of the single-JTE region and the mesa-transition, respectively. Thereby, due to the reduction of the electrical field, the maximum breakdown voltage is increased to 91.5% of the theoretical, parallel-plane breakdown voltage of 6.5 kV and the maximum acceptable deviation of the optimum implantation dose is twice than that of the single- JTE structure. Furthermore, due to the internal ring, the mesa-transition is shielded from the electrical field and therefore the breakdown voltage is much less affected by the angle of the mesa.
Handle:	http://hdl.handle.net/11386/4657562
Appare nelle tipologie:	4.1.1 Proceedings con DOI

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