For the first time, a full analytical model of the electric field in the gate oxide of 4H-polytype silicon carbide (4H-SiC) power double-implanted MOSFET devices is shown. It takes into account all the relevant physical and geometrical parameters of the device and avoids the use of any fitting parameters. To validate the results of the full-analytical model, comparisons with numerical simulations are reported for device structures having different values of the drift doping concentration and drift thickness as well as of the junction FET (JFET)-region width. Moreover, because the model equations are in closed form, they can be used to derive an adequate JFET-region geometry by fixing the maximum electric field in the oxide and the maximum blocking voltage for a given drift region.
|Titolo:||A Model of Electric Field Distribution in Gate Oxide and JFET-Region of 4H-SiC DMOSFETs|
|Data di pubblicazione:||2016|
|Appare nelle tipologie:||1.1.1 Articolo su rivista con DOI|