We etched a n-Si wafer to form arrays of Si-nanotips emerging from a SiO2 layer on which we transferred CVD grown monolayer graphene. We measured the electrical characteristics of the junction and found a rectifying behavior with On/Off ratio increasing with decreasing temperature and at room temperature higher than 1.5·102 at ±0.5V. The ideality factor of the diode is near-ideal with a value of 1.5 at room temperature. The Schottky barrier height monotonically increases from reverse to forward bias, with a value of 0.36±0.02 eV at zero bias. This behavior can be explained as a combination of graphene features and image force barrier lowering. The diode shows photoresponse and fotovoltaic effect when exposed to visible light. The photoresponse is pronounced at near infrared (IR) radiation.
Graphene/Si Schottky diodes
Luongo, Giuseppe;IEMMO, LAURA;DI BARTOLOMEO, Antonio
2016-01-01
Abstract
We etched a n-Si wafer to form arrays of Si-nanotips emerging from a SiO2 layer on which we transferred CVD grown monolayer graphene. We measured the electrical characteristics of the junction and found a rectifying behavior with On/Off ratio increasing with decreasing temperature and at room temperature higher than 1.5·102 at ±0.5V. The ideality factor of the diode is near-ideal with a value of 1.5 at room temperature. The Schottky barrier height monotonically increases from reverse to forward bias, with a value of 0.36±0.02 eV at zero bias. This behavior can be explained as a combination of graphene features and image force barrier lowering. The diode shows photoresponse and fotovoltaic effect when exposed to visible light. The photoresponse is pronounced at near infrared (IR) radiation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
