In this paper we carry out a theoretical and experimental study of the nature of graphene/ (3D/2D)-semiconductor Schottky contact. We use quantum statistical theory to derive a simple and parameter-free carrier transport model of graphene/ (3D/2D)-semiconductor Schottky contact, which is validated by the quantum Landauer theory and First-principle calculations. The proposed model can well explain experimental results for large samples of different types of graphene/ (3D/2D)-semiconductor Schottky contact.
|Titolo:||A new perspective on the nature of graphene- semiconductor (3D/2D) Schottky contact: A combined theoretical and experimental approach|
|Data di pubblicazione:||2016|
|Appare nelle tipologie:||4.1 Contributi in Atti di convegno|