For the first time, we report an analytical model of the electric field in the gate oxide of power DMOSFETs. The model describes the dependency of EOX on doping concentrations and thicknesses of the drift-region as well as on the JFET-region geometry when reverse bias is applied to the device. There are not fitting parameters in the equations so that the model can be used as an a priori tool of analysis for reverse behaviour. Comparisons with numerical simulations are reported in order to show the goodness of the model results.
|Titolo:||Analysis and modelling of the electric field in the Gate oxide of 4H-SiC DMOSFET|
|Data di pubblicazione:||2016|
|Appare nelle tipologie:||4.1.1 Proceedings con DOI|