A new temperature sensor based on a divanadium pentoxide/4H-silicon carbide (V2O5/4H-SiC) Schottky diode is presented. The realized device shows a good linear dependence vs. temperature of the voltage drop measured across the forward-biased junction. The diode performance, i.e. linearity and sensitivity, were analyzed in the temperature range from 147 K up to 400 K. Moreover, fundamental diode parameters were extracted from current-voltage characteristics.
Divanadium Pentoxide/4H-silicon Carbide: A Schottky Contact for Highly Linear Temperature Sensors
DI BENEDETTO, Luigi;RUBINO, Alfredo;LICCIARDO, Gian Domenico;
2016
Abstract
A new temperature sensor based on a divanadium pentoxide/4H-silicon carbide (V2O5/4H-SiC) Schottky diode is presented. The realized device shows a good linear dependence vs. temperature of the voltage drop measured across the forward-biased junction. The diode performance, i.e. linearity and sensitivity, were analyzed in the temperature range from 147 K up to 400 K. Moreover, fundamental diode parameters were extracted from current-voltage characteristics.File in questo prodotto:
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