Vertical Organic Transistors and Phototransistors have been proven to be promising technologies due to the advantages of reduced channel length and larger sensitive area with respect to planar devices. Nevertheless, a real improvement of their performance is subordinate to the quantitative description of their operation mechanisms. In this work, we present a comparative study on the modeling of vertical and planar Organic Phototransistor (OPT) structures. Computer-based simulations of the devices have been carried out with Synopsys Sentaurus TCAD in a 2D Drift-Diffusion framework. The photoactive semiconductor material has been modeled using the virtual semiconductor approach as the archetypal P3HT:PC61BM bulk heterojunction. It has been found that both simulated devices have comparable electrical and optical characteristics, accordingly to recent experimental reports on the subject.
|Titolo:||Comparative modeling of vertical and planar organic phototransistors with 2D drift-diffusion simulations|
|Data di pubblicazione:||2016|
|Appare nelle tipologie:||4.1.1 Proceedings con DOI|