A proportional to absolute temperature sensor (PTAT) based on V2O5/4H-SiC (divanadium pentoxide/4H polytype of silicon carbide) Schottky diodes is presented. The linear dependence between the voltage differences across two constant-current forward biased diodes on temperature has been used for thermal sensing in the wide temperature range from T=147 K up to 400 K. A sensitivity of 307 μV/K was calculated for two constant bias currents, ID1=16 μA and ID2=608 μA.
V2O5/4H-SiC Schottky diode as a high performance PTAT sensor
DI BENEDETTO, LUIGI;RUBINO, Alfredo
2016-01-01
Abstract
A proportional to absolute temperature sensor (PTAT) based on V2O5/4H-SiC (divanadium pentoxide/4H polytype of silicon carbide) Schottky diodes is presented. The linear dependence between the voltage differences across two constant-current forward biased diodes on temperature has been used for thermal sensing in the wide temperature range from T=147 K up to 400 K. A sensitivity of 307 μV/K was calculated for two constant bias currents, ID1=16 μA and ID2=608 μA.File in questo prodotto:
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