High-temperature superconductivity in cuprate materials is achieved by hole or electron doping of the parent Mott insulator. In this paper, electron-doped Nd2-xCexCuO4±δ films with different content of cerium have been grown on (010) SrTiO3(TiO2) substrates through a dc sputtering technique. Since the normal conducting films can be obtained by controlling the oxygen content inside the crystalline structure by means of appropriate annealing procedures (that allow a reduction process), different as-grown nonsuperconducting films have been obtained. The samples have been thermally treated ex-situ at different temperatures and atmospheres in order to investigate the effects of different content of oxygen on the films properties. The results of the composition analysis, of the structural characterization and of the electric transport measurements on samples with a Ce fraction of 0 and 0.15 will be discussed.

Characterization of Nd2-xCexCuO4±δ(x = 0 and 0.15) Ultrathin Films Grown by DC Sputtering Technique

GUARINO, ANITA;ROMANO, Paola;LEO, ANTONIO;MARTUCCIELLO, NADIA;GRIMALDI, Gaia;D'AGOSTINO, DOMENICO;BOBBA, Fabrizio;PACE, Sandro;NIGRO, Angela
2017-01-01

Abstract

High-temperature superconductivity in cuprate materials is achieved by hole or electron doping of the parent Mott insulator. In this paper, electron-doped Nd2-xCexCuO4±δ films with different content of cerium have been grown on (010) SrTiO3(TiO2) substrates through a dc sputtering technique. Since the normal conducting films can be obtained by controlling the oxygen content inside the crystalline structure by means of appropriate annealing procedures (that allow a reduction process), different as-grown nonsuperconducting films have been obtained. The samples have been thermally treated ex-situ at different temperatures and atmospheres in order to investigate the effects of different content of oxygen on the films properties. The results of the composition analysis, of the structural characterization and of the electric transport measurements on samples with a Ce fraction of 0 and 0.15 will be discussed.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4693591
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 10
  • ???jsp.display-item.citation.isi??? 8
social impact