We present scanning tunneling microscopy and spectroscopy measurements on FeSe1-xSx single crystals with x=0, 0.04, and 0.09. The S substitution into the Se site is equivalent to a positive chemical pressure, since S and Se have the same valence and S has a smaller ionic radius than Se. The subsequent changes in the electronic structure of FeSe induce a decrease of the structural transition temperature and a small increase in the superconducting critical temperature. The evolution of the gaps with increasing S concentration suggests an increase of the hole Fermi surface. Moreover, the vortex core anisotropy, that likely reflects the Fermi surface anisotropy, is strongly suppressed by the S substitution.

Evolution of the superconducting properties in FeSe1-x Sx

DI GIORGIO, CINZIA;IAVARONE, Maria
2015-01-01

Abstract

We present scanning tunneling microscopy and spectroscopy measurements on FeSe1-xSx single crystals with x=0, 0.04, and 0.09. The S substitution into the Se site is equivalent to a positive chemical pressure, since S and Se have the same valence and S has a smaller ionic radius than Se. The subsequent changes in the electronic structure of FeSe induce a decrease of the structural transition temperature and a small increase in the superconducting critical temperature. The evolution of the gaps with increasing S concentration suggests an increase of the hole Fermi surface. Moreover, the vortex core anisotropy, that likely reflects the Fermi surface anisotropy, is strongly suppressed by the S substitution.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4693893
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