High quality NbN-NbOx-Pb Josephson devices have been fabricated by r.f. diode sputtering. The critical temperatures of the NbN films were as high as 16.8 K. The junction geometry was defined by photolithography and the oxide barrier was obtained by thermal oxidation or by a plasma oxidation technique. Very low leakage currents have been obtained corresponding to values of the parameter Vm = 80 mV (Vm=IO x 2 mV/I (2mV)). The junction microwave quality factor Q and other a.c. properties have been measured in the frequency range 20 - 300 GHz by looking at the devices self-resonant mode. Q values up to 120 at 4.2 K have been found in the low frequency range, indicating potential performances of these devices for microwave applications such as Josephson voltage standards. Theoretical analysis of the results shows that the main contribution to the losses is related to the NbN films surface impedance. Â© 1987 IEEE.
|Titolo:||A.C. properties of NbN based josephson junctions|
|Data di pubblicazione:||1987|
|Appare nelle tipologie:||1.1.1 Articolo su rivista con DOI|