We have realized nanowires using Co-doped BaFe2As2 thin films with 20 nm thickness deposited on CaF2 (100) substrates by pulsed laser deposition. The films were passivated in-situ with a thin layer of MgAl2O4. Subsequently, several submicron nanowire structures were patterned using electron beam lithography, and electrically contacted to gold pads. Electrical characterizations of the realized nanostructures show good properties in terms of material resistivity and critical current, with a Tc of 16 K for a 500 nm wide nanowire.
Realization and Characterization of Iron-Based Superconducting Nanowires for Detector Applications
Pagano S.
Writing – Original Draft Preparation
;Barone C.Writing – Original Draft Preparation
;Martucciello N.Data Curation
;
2017-01-01
Abstract
We have realized nanowires using Co-doped BaFe2As2 thin films with 20 nm thickness deposited on CaF2 (100) substrates by pulsed laser deposition. The films were passivated in-situ with a thin layer of MgAl2O4. Subsequently, several submicron nanowire structures were patterned using electron beam lithography, and electrically contacted to gold pads. Electrical characterizations of the realized nanostructures show good properties in terms of material resistivity and critical current, with a Tc of 16 K for a 500 nm wide nanowire.File in questo prodotto:
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