Nanowires of Co-doped BaFe2As2 have been realized and characterized. Thin films having thickness of 20 nm were grown on CaF2 (100) substrates by pulsed laser deposition. The films were then passivated in situ with a thin layer of MgAl2O4. Using electron beam lithography, several submicron nanowire structures were patterned and electrically contacted to gold pads. The nanostructures have a superconducting critical temperature Tc of 16 K, for a 500-nm-wide nanowire, and properties, in terms of normal state resistivity (0.3 mΩ⋅cm) and critical current (1 MA/cm2 at 3 K), comparable with those of NbN nanowires. Moreover, they show localization effects in the normal state, while the current–voltage characteristics are dominated by flux creep.

Co-Doped BaFe2As2 Superconducting Nanowires for Detector Applications

Pagano S.
Writing – Original Draft Preparation
;
Barone C.
Writing – Original Draft Preparation
;
Martucciello N.
Membro del Collaboration Group
;
2018-01-01

Abstract

Nanowires of Co-doped BaFe2As2 have been realized and characterized. Thin films having thickness of 20 nm were grown on CaF2 (100) substrates by pulsed laser deposition. The films were then passivated in situ with a thin layer of MgAl2O4. Using electron beam lithography, several submicron nanowire structures were patterned and electrically contacted to gold pads. The nanostructures have a superconducting critical temperature Tc of 16 K, for a 500-nm-wide nanowire, and properties, in terms of normal state resistivity (0.3 mΩ⋅cm) and critical current (1 MA/cm2 at 3 K), comparable with those of NbN nanowires. Moreover, they show localization effects in the normal state, while the current–voltage characteristics are dominated by flux creep.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4713070
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