We present the electrical characterization of mono and bilayer MoS2 back-gate field-effect transistors with ohmic or Schottky contacts. We investigate features such as persistent photoconductivity, hysteresis and field emission.
Persistent Photoconductivity, Hysteresis and Field Emission in MoS2 Back-Gate Field-Effect Transistors
Di Bartolomeo, Antonio
Writing – Original Draft Preparation
;IEMMO, LAURA;Giubileo, Filippo;LUONGO, GIUSEPPE;URBAN, FRANCESCA;GRILLO, ALESSANDRO
2019-01-01
Abstract
We present the electrical characterization of mono and bilayer MoS2 back-gate field-effect transistors with ohmic or Schottky contacts. We investigate features such as persistent photoconductivity, hysteresis and field emission.File in questo prodotto:
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