Very weak left/right asymmetry in reflection and transmission is offered by a layer of a topological insulator on top of a layer of an anisotropic dielectric material, but it can be enhanced very significantly by using a periodic multilayer of both types of materials. This is an attractive prospect for realizing one-way terahertz devices, because both types of materials can be grown using standard physical-vapor-deposition techniques.
Enhanced left/right asymmetry in reflection and transmission due to a periodic multilayer of a topological insulator and an anisotropic dielectric material
Francesco Chiadini
;Vincenzo Fiumara;Akhlesh Lakhtakia;Antonio Scaglione
2019-01-01
Abstract
Very weak left/right asymmetry in reflection and transmission is offered by a layer of a topological insulator on top of a layer of an anisotropic dielectric material, but it can be enhanced very significantly by using a periodic multilayer of both types of materials. This is an attractive prospect for realizing one-way terahertz devices, because both types of materials can be grown using standard physical-vapor-deposition techniques.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
