Analysis of the Potential Barrier on the Behaviour of 4H-SiC JBS Temperature Sensors

In this paper we report the dependency of the potential barrier height in 4H-SiC Junction Barrier Schottky diodes on the channel width and on the junction temperature. The model takes onto account geometrical parameters of the device and physical parameters, like the work function of the Schottky metal and the doping concentration of the epilayer. The obtained expressions are fully analytical so that the dependency is well described. Moreover, the model results are compared with numerical simulations in order to understand the goodness of the proposed model. It is also shown the different effect of the temperature on the potential barrier height and, in particular, the barrier reduces its values with the temperature when the channel width is lower than 1 µm. That expects a different behavior of the devices as temperature sensors, like sensitivity, in terms of the only channel width making the design of the sensor easier.