This study deals with the electrical transport in back-gate field-eect tran-sistors with ultrathin palladium diselenide (PdSe2) channels. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction of PdSe2 nanosheets, combined with the sharp edge and the work function decreasing with the number of layers, opens up new applications in vacuum electronics. This work is the first experimental demonstration of field emission current from few-layer PdSe2 and extends the plethora of applications of this recently isolated pentagonal layered material. Field-emission from PdSe2 nanosheets is obtained with a turn-on field below 100Vµm−1 and attains currents up to the µA.
Field Emission in Ultrathin PdSe2 Back‐Gated Transistors
Di Bartolomeo, Antonio
Writing – Original Draft Preparation
;Pelella, AnielloData Curation
;Urban, FrancescaInvestigation
;Grillo, AlessandroInvestigation
;Iemmo, LauraSoftware
;Passacantando, MaurizioData Curation
;Giubileo, FilippoInvestigation
2020-01-01
Abstract
This study deals with the electrical transport in back-gate field-eect tran-sistors with ultrathin palladium diselenide (PdSe2) channels. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction of PdSe2 nanosheets, combined with the sharp edge and the work function decreasing with the number of layers, opens up new applications in vacuum electronics. This work is the first experimental demonstration of field emission current from few-layer PdSe2 and extends the plethora of applications of this recently isolated pentagonal layered material. Field-emission from PdSe2 nanosheets is obtained with a turn-on field below 100Vµm−1 and attains currents up to the µA.File | Dimensione | Formato | |
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Adv Elect Materials - 2020 - Di Bartolomeo - Field Emission in Ultrathin PdSe2 Back‐Gated Transistors (2).pdf
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