We demonstrate the existence of localized states in close vicinity of a linear defect in graphene. These states have insulating or conducting character. Insulating states form a flat band, while conducting states present a slowdown of the group velocity which is not originated by many-body interactions and it is controlled by the interface properties. For appropriate boundary conditions, the conducting states exhibit momentum-valley locking and protection from backscattering effects. These findings provide a contribution to the recent discussion on the origin of correlated phases in graphene.
|Titolo:||Conduction properties of extended defect states in Dirac materials|
ROMEO, FRANCESCO [Investigation] (Corresponding)
|Data di pubblicazione:||2020|
|Appare nelle tipologie:||1.1.1 Articolo su rivista con DOI|