GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate modulated p-type conduction is decreased by exposure to light or electron beam. Moreover, the observation of a field emission current demonstrates the suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up new perspective applications of two-dimensional GeAs in vacuum electronics. Field emission occurs with a turn-on field of ~80 / and attains a current density higher than 10 A/2, following the general Fowler-Nordheim model with high reproducibility.

Field emission from two-dimensional GeAs

Di Bartolomeo, Antonio
Writing – Original Draft Preparation
;
Grillo, Alessandro
Investigation
;
Giubileo, Filippo
Investigation
;
Passacantando, Maurizio
Investigation
2021

Abstract

GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate modulated p-type conduction is decreased by exposure to light or electron beam. Moreover, the observation of a field emission current demonstrates the suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up new perspective applications of two-dimensional GeAs in vacuum electronics. Field emission occurs with a turn-on field of ~80 / and attains a current density higher than 10 A/2, following the general Fowler-Nordheim model with high reproducibility.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/4754454
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