We present a simple and fast methodology to realize metal contacts on two-dimensional nanosheets. In particular, we perform a complete characterization of the transport properties of MoS2 monolayer flakes on SiO2/Si substrates by using nano-manipulated metallic tips as metallic electrodes directly approached on the flake surface. We report a detailed experimental investigation of transport properties and contact resistance in back-gated field-effect transistor in which the Si substrate is used as the gate electrode. Moreover, profiting from the n-type conduction as well as the high aspect ratio at the edge of the MoS2 flakes, we also explored the possibility to exploit the material as a field emitter. Indeed, by retracting one of the metallic probes (the anode) from the sample surface, it has been possible to switch on a field emitted current by applying a relatively low external electric field of few tens of Volts for cathode-anode separation distance below 1µm. Experimental data are then analyzed in the framework of Fowler-Nordheim theory and its extension to the two-dimensional limit.
Direct contacting of 2D nanosheets by metallic nanoprobes
	
	
	
		
		
		
		
		
	
	
	
	
	
	
	
	
		
		
		
		
		
			
			
			
		
		
		
		
			
			
				
				
					
					
					
					
						
						
							
							
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
			
			
				
				
					
					
					
					
						
							
						
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
			
			
				
				
					
					
					
					
						
							
						
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
			
			
				
				
					
					
					
					
						
							
						
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
			
			
				
				
					
					
					
					
						
							
						
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
			
			
				
				
					
					
					
					
						
							
						
						
					
				
				
				
				
				
				
				
				
				
				
				
			
			
		
		
		
		
	
Urban, FrancescaInvestigation
;Grillo, AlessandroInvestigation
;Pelella, AnielloInvestigation
;Faella, EnverInvestigation
;Di Bartolomeo, AntonioInvestigation
	
		
		
	
			2020
Abstract
We present a simple and fast methodology to realize metal contacts on two-dimensional nanosheets. In particular, we perform a complete characterization of the transport properties of MoS2 monolayer flakes on SiO2/Si substrates by using nano-manipulated metallic tips as metallic electrodes directly approached on the flake surface. We report a detailed experimental investigation of transport properties and contact resistance in back-gated field-effect transistor in which the Si substrate is used as the gate electrode. Moreover, profiting from the n-type conduction as well as the high aspect ratio at the edge of the MoS2 flakes, we also explored the possibility to exploit the material as a field emitter. Indeed, by retracting one of the metallic probes (the anode) from the sample surface, it has been possible to switch on a field emitted current by applying a relatively low external electric field of few tens of Volts for cathode-anode separation distance below 1µm. Experimental data are then analyzed in the framework of Fowler-Nordheim theory and its extension to the two-dimensional limit.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


