We report a detailed investigation of the field emission properties of transition metal dichalcogenides, namely MoS 2 and WSe 2 , taking advantage of an experimental setup realized inside a scanning electron microscope equipped with nano-manipulated probe-tips, used for positioning a tip-shaped anode at a nanometric distance from the emitting surface. For n-type WSe 2 monolayer on Si/SiO 2 substrate, we show that electrons can be extracted also from the flat part of the flake with a current intensity up to few nanoamperes. More interestingly, we demonstrate that the field emission current can be modulated by the back-gate voltage that controls the n-type doping of the WSe 2 monolayer. Similarly, we demonstrate that monolayer MoS 2 flakes are suitable for gate-controlled field emission devices, opening the way to the development of new field emission transistors based on ultrathin materials.

2D transition metal dichalcogenides nanosheets as gate modulated cold electron emitters

Giubileo, Filippo
Writing – Original Draft Preparation
;
Faella, Enver
Investigation
;
Pelella, Aniello
Investigation
;
Grillo, Alessandro
Investigation
;
Passacantando, Maurizio
Investigation
;
Di Bartolomeo, Antonio
Conceptualization
2021

Abstract

We report a detailed investigation of the field emission properties of transition metal dichalcogenides, namely MoS 2 and WSe 2 , taking advantage of an experimental setup realized inside a scanning electron microscope equipped with nano-manipulated probe-tips, used for positioning a tip-shaped anode at a nanometric distance from the emitting surface. For n-type WSe 2 monolayer on Si/SiO 2 substrate, we show that electrons can be extracted also from the flat part of the flake with a current intensity up to few nanoamperes. More interestingly, we demonstrate that the field emission current can be modulated by the back-gate voltage that controls the n-type doping of the WSe 2 monolayer. Similarly, we demonstrate that monolayer MoS 2 flakes are suitable for gate-controlled field emission devices, opening the way to the development of new field emission transistors based on ultrathin materials.
978-1-6654-4156-8
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/4768822
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