We present a combined resonant soft X-ray reflectivity and electric transport study of LaAlO 3/SrTiO 3 field effect devices. The depth profiles with atomic layer resolution that are obtained from the resonant reflectivity reveal a pronounced temperature dependence of the two-dimensional electron liquid at the LaAlO 3/SrTiO 3 interface. At room temperature the corresponding electrons are located close to the interface, extending down to 4 unit cells into the SrTiO 3 substrate. Upon cooling, however, these interface electrons assume a bimodal depth distribution: They spread out deeper into the SrTiO 3 and split into two distinct parts, namely one close to the interface with a thickness of about 4 unit cells and another centered around 9 unit cells from the interface. The results are consistent with theoretical predictions based on oxygen vacancies at the surface of the LaAlO 3 film and support the notion of a complex interplay between structural and electronic degrees of freedom.

Transition from a uni- to a bimodal interfacial charge distribution in LaAlO 3 / SrTiO 3 upon cooling

Leo A.;
2020

Abstract

We present a combined resonant soft X-ray reflectivity and electric transport study of LaAlO 3/SrTiO 3 field effect devices. The depth profiles with atomic layer resolution that are obtained from the resonant reflectivity reveal a pronounced temperature dependence of the two-dimensional electron liquid at the LaAlO 3/SrTiO 3 interface. At room temperature the corresponding electrons are located close to the interface, extending down to 4 unit cells into the SrTiO 3 substrate. Upon cooling, however, these interface electrons assume a bimodal depth distribution: They spread out deeper into the SrTiO 3 and split into two distinct parts, namely one close to the interface with a thickness of about 4 unit cells and another centered around 9 unit cells from the interface. The results are consistent with theoretical predictions based on oxygen vacancies at the surface of the LaAlO 3 film and support the notion of a complex interplay between structural and electronic degrees of freedom.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/4771682
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