The IV–V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and is characterized by a band gap ranging from 0.6 eV (bulk form) up to 2.1 eV (monolayer). We investigate the field emission characteristics of exfoliated multilayer GeAs nanosheets by means of a tip-anode setup, where a nanomanipulatio W-tip is positioned in front of the GeAs emitting layer at nanometric distance, all controlled inside a scanning electron microscope. We demonstrate that GeAs multilayers are suitable to develop electron sources, with turn-on field of the order of 102 Vµm-1 , and field enhancement factor of about 70.
Germanium arsenide nanosheets applied as two-dimensional field emitters
Giubileo, F
Writing – Original Draft Preparation
;Grillo, AInvestigation
;Pelella, AInvestigation
;Faella, EInvestigation
;Passacantando, MInvestigation
;Di Bartolomeo, ASupervision
2021-01-01
Abstract
The IV–V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and is characterized by a band gap ranging from 0.6 eV (bulk form) up to 2.1 eV (monolayer). We investigate the field emission characteristics of exfoliated multilayer GeAs nanosheets by means of a tip-anode setup, where a nanomanipulatio W-tip is positioned in front of the GeAs emitting layer at nanometric distance, all controlled inside a scanning electron microscope. We demonstrate that GeAs multilayers are suitable to develop electron sources, with turn-on field of the order of 102 Vµm-1 , and field enhancement factor of about 70.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
