The IV–V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and is characterized by a band gap ranging from 0.6 eV (bulk form) up to 2.1 eV (monolayer). We investigate the field emission characteristics of exfoliated multilayer GeAs nanosheets by means of a tip-anode setup, where a nanomanipulatio W-tip is positioned in front of the GeAs emitting layer at nanometric distance, all controlled inside a scanning electron microscope. We demonstrate that GeAs multilayers are suitable to develop electron sources, with turn-on field of the order of 102 Vµm-1 , and field enhancement factor of about 70.

Germanium arsenide nanosheets applied as two-dimensional field emitters

Giubileo, F
Writing – Original Draft Preparation
;
Grillo, A
Investigation
;
Pelella, A
Investigation
;
Faella, E
Investigation
;
Passacantando, M
Investigation
;
Di Bartolomeo, A
Supervision
2021

Abstract

The IV–V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and is characterized by a band gap ranging from 0.6 eV (bulk form) up to 2.1 eV (monolayer). We investigate the field emission characteristics of exfoliated multilayer GeAs nanosheets by means of a tip-anode setup, where a nanomanipulatio W-tip is positioned in front of the GeAs emitting layer at nanometric distance, all controlled inside a scanning electron microscope. We demonstrate that GeAs multilayers are suitable to develop electron sources, with turn-on field of the order of 102 Vµm-1 , and field enhancement factor of about 70.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/4771971
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