In this presentation, we discuss all-perovskite tandem solar cells that offer low-weight, high-efficiency, and high power-weight attributes, about five times larger than commercially available, industry-standard III-V semiconductor on Ge triple-junction space solar cells. We show that all-perovskite tandem PV possesses a remarkable radiation tolerance. Our tests under 68 MeV proton irradiation revealed negligible degradation (< 6 %) at a dose of 1013p+cm2. Their resilience thus exceeds not only previously tested perovskite/CIGS tandem PV1 but also commercially available radiation-hardened space PV (> 22%) that we tested under identical conditions. Using sub-cell selective high-spatial-resolution PL microscopy & intensity dependant absolute PL measurements, we then bring to light the fundamentally different origin of radiation damage in traditional III-V semiconductor-based PV systems compared to halide perovskite-based tandem PV. Pseudo-JV measurements constructed from optically measured quasi-Fermi level (QFLS) splitting of high-and low-gap perovskite absorbers prior to and after proton irradiation reveal no degradation, suggesting that further improvements of their radiation resilience are possible with optimized contact layers.
Radiation Tolerant All-Perovskite Multijunction Solar Cells for Moon, Mars and Deep Space Applications
Neitzert, Heinz-Christoph;
2021-01-01
Abstract
In this presentation, we discuss all-perovskite tandem solar cells that offer low-weight, high-efficiency, and high power-weight attributes, about five times larger than commercially available, industry-standard III-V semiconductor on Ge triple-junction space solar cells. We show that all-perovskite tandem PV possesses a remarkable radiation tolerance. Our tests under 68 MeV proton irradiation revealed negligible degradation (< 6 %) at a dose of 1013p+cm2. Their resilience thus exceeds not only previously tested perovskite/CIGS tandem PV1 but also commercially available radiation-hardened space PV (> 22%) that we tested under identical conditions. Using sub-cell selective high-spatial-resolution PL microscopy & intensity dependant absolute PL measurements, we then bring to light the fundamentally different origin of radiation damage in traditional III-V semiconductor-based PV systems compared to halide perovskite-based tandem PV. Pseudo-JV measurements constructed from optically measured quasi-Fermi level (QFLS) splitting of high-and low-gap perovskite absorbers prior to and after proton irradiation reveal no degradation, suggesting that further improvements of their radiation resilience are possible with optimized contact layers.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
