In this presentation, we discuss all-perovskite tandem solar cells that offer low-weight, high-efficiency, and high power-weight attributes, about five times larger than commercially available, industry-standard III-V semiconductor on Ge triple-junction space solar cells. We show that all-perovskite tandem PV possesses a remarkable radiation tolerance. Our tests under 68 MeV proton irradiation revealed negligible degradation (< 6 %) at a dose of 1013p+cm2. Their resilience thus exceeds not only previously tested perovskite/CIGS tandem PV1 but also commercially available radiation-hardened space PV (> 22%) that we tested under identical conditions. Using sub-cell selective high-spatial-resolution PL microscopy & intensity dependant absolute PL measurements, we then bring to light the fundamentally different origin of radiation damage in traditional III-V semiconductor-based PV systems compared to halide perovskite-based tandem PV. Pseudo-JV measurements constructed from optically measured quasi-Fermi level (QFLS) splitting of high-and low-gap perovskite absorbers prior to and after proton irradiation reveal no degradation, suggesting that further improvements of their radiation resilience are possible with optimized contact layers.

Radiation Tolerant All-Perovskite Multijunction Solar Cells for Moon, Mars and Deep Space Applications

Neitzert, Heinz-Christoph;
2021

Abstract

In this presentation, we discuss all-perovskite tandem solar cells that offer low-weight, high-efficiency, and high power-weight attributes, about five times larger than commercially available, industry-standard III-V semiconductor on Ge triple-junction space solar cells. We show that all-perovskite tandem PV possesses a remarkable radiation tolerance. Our tests under 68 MeV proton irradiation revealed negligible degradation (< 6 %) at a dose of 1013p+cm2. Their resilience thus exceeds not only previously tested perovskite/CIGS tandem PV1 but also commercially available radiation-hardened space PV (> 22%) that we tested under identical conditions. Using sub-cell selective high-spatial-resolution PL microscopy & intensity dependant absolute PL measurements, we then bring to light the fundamentally different origin of radiation damage in traditional III-V semiconductor-based PV systems compared to halide perovskite-based tandem PV. Pseudo-JV measurements constructed from optically measured quasi-Fermi level (QFLS) splitting of high-and low-gap perovskite absorbers prior to and after proton irradiation reveal no degradation, suggesting that further improvements of their radiation resilience are possible with optimized contact layers.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/4772426
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