An improved version of a recently proposed PIN diode circuit model is proposed. The most appealing feature of this model is the easy parameter extraction procedure, that requires neither an in-depth knowledge of device manufacturing, nor particularly complex measurements of device characteristics. The parameter extraction procedure developed in the paper is carried out in an automatic fashion, with the help of a new stochastic global optimisation algorithm. A comprehensive set of experimental results shows the effectiveness of the PIN diode model and of the parameter extraction technique

Improved PiN Diode Circuit Model with Automatic Parameter Extraction Technique

NAPOLI, ETTORE
1997-01-01

Abstract

An improved version of a recently proposed PIN diode circuit model is proposed. The most appealing feature of this model is the easy parameter extraction procedure, that requires neither an in-depth knowledge of device manufacturing, nor particularly complex measurements of device characteristics. The parameter extraction procedure developed in the paper is carried out in an automatic fashion, with the help of a new stochastic global optimisation algorithm. A comprehensive set of experimental results shows the effectiveness of the PIN diode model and of the parameter extraction technique
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4772641
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 19
  • ???jsp.display-item.citation.isi??? 13
social impact