The paper presents an analytic two-dimensional model for breakdown voltage of recently proposed superjunction structures. The two-dimensional model is able to correctly estimate electric eld and breakdown voltage giving an insight in superjunction devices behavior. Proposed closed form equations for superjunction dimensions and doping as a function of breakdown voltage are useful guidelines to optimal design. The two-dimensional model overcomes the limits of one-dimensional approxima- tions that are likely to overestimate breakdown voltage.
Power Superjunction Devices : an Analytic Model for Breakdown Voltage
NAPOLI, ETTORE
2001-01-01
Abstract
The paper presents an analytic two-dimensional model for breakdown voltage of recently proposed superjunction structures. The two-dimensional model is able to correctly estimate electric eld and breakdown voltage giving an insight in superjunction devices behavior. Proposed closed form equations for superjunction dimensions and doping as a function of breakdown voltage are useful guidelines to optimal design. The two-dimensional model overcomes the limits of one-dimensional approxima- tions that are likely to overestimate breakdown voltage.File in questo prodotto:
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