A two-dimensional (2-D) analytical model for the calculation of breakdown voltage of recently proposed power superjunction (SJ) devices is presented. The model is able to correctly estimate electric field and breakdown voltage giving a deep insight in the design of SJ structures. Design criteria to minimize ON-resistance for a given breakdown voltage are discussed. Numerical 2-D simulations validate the proposed model.
Optimal ON Resistance vs. Breakdown Voltage Trade-off in Superjunction Power Devices: a Novel Analytical Model
NAPOLI, ETTORE
2001-01-01
Abstract
A two-dimensional (2-D) analytical model for the calculation of breakdown voltage of recently proposed power superjunction (SJ) devices is presented. The model is able to correctly estimate electric field and breakdown voltage giving a deep insight in the design of SJ structures. Design criteria to minimize ON-resistance for a given breakdown voltage are discussed. Numerical 2-D simulations validate the proposed model.File in questo prodotto:
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