In this paper, we investigate the avalanche behavior of field-stop insulated gate bipolar transistors (IGBTs) by means of analytical and theoretical considerations, supported by ad hoc numerical simulations. A physical explanation of the presence of negative differential resistance branches in the avalanche I-V curve of the IGBT is presented and design criteria are derived to reduce and eventually eliminate this effect.
Physics of the Negative Resistance in the Avalanche I-V Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness
NAPOLI, ETTORE;
2014-01-01
Abstract
In this paper, we investigate the avalanche behavior of field-stop insulated gate bipolar transistors (IGBTs) by means of analytical and theoretical considerations, supported by ad hoc numerical simulations. A physical explanation of the presence of negative differential resistance branches in the avalanche I-V curve of the IGBT is presented and design criteria are derived to reduce and eventually eliminate this effect.File in questo prodotto:
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