The lateral insulated gate bipolar transistor (IGBT) behavior differs in many aspects from the well-studied vertical IGBT. In this paper, the voltage derivative during inductive turnoff for a silicon-on-insulator (SOI) lateral IGBT (LIGBT) is analyzed in detail. A complete model which accounts for the voltage rise is implemented through an accurate calculation of the equivalent output capacitance. The model is in excellent agreement with two-dimensional simulations and experimental results across a wide range of conditions. Further, the paper shows that previously proposed models, which targeted the vertical IGBT, are not adequate for the description of the turnoff voltage rise in the LIGBT.
Modeling Voltage Derivative During Inductive Turnoff in Thin SOI LIGBT
NAPOLI, ETTORE;
2005-01-01
Abstract
The lateral insulated gate bipolar transistor (IGBT) behavior differs in many aspects from the well-studied vertical IGBT. In this paper, the voltage derivative during inductive turnoff for a silicon-on-insulator (SOI) lateral IGBT (LIGBT) is analyzed in detail. A complete model which accounts for the voltage rise is implemented through an accurate calculation of the equivalent output capacitance. The model is in excellent agreement with two-dimensional simulations and experimental results across a wide range of conditions. Further, the paper shows that previously proposed models, which targeted the vertical IGBT, are not adequate for the description of the turnoff voltage rise in the LIGBT.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
