Power rectifier model including self heating effects

compact circuit model for power PiN diode is presented in this paper. The model includes thermal and electrical characteristics. Emitter efficiency effect, voltage drop due to epilayer region and accurate modeling of reverse recovery and forward recovery are main features of the electric part of the model. The thermal part of the model dynamically takes into account heat generation and flow through the device and includes the effect of temperature on diode model parameters. Circuit implementation of device thermal equations includes the effect of the non uniform heat generation in the chip and, hence, is very effective in modeling thermal response to short current pulses, which give a substantial modification of power rectifiers characteristics with negligible case heating. Modeling of charge distribution in the epilayer and of heat flow, is achieved through an approximation of the Laplace transform of the exact solution. The model is implemented as a Pspice subcircuit. Medici device simulations, including self heating, are used to validate the Pspice model.