The effect of the bandgap narrowing (BGN) on performance of power devices has been investigated in detail in this paper. The analysis has revealed that the change in the energy band structure caused by bandgap narrowing can strongly affect the conductivity modulation of the bipolar devices resulting in completely different performance. This is due to the modified injection efficiency under high level injection conditions. Using a comprehensive analysis of the injection efficiency in a p-n junction an analytical model for this phenomenon has been developed. Bandgap narrowing model tuning has been proved to be essential in accurately predicting the performance of a Lateral IGBT. Other devices such as PIN diodes or PT IGBTs are significantly affected by the BGN while others, such as FS IGBT or the power MOSFET, are only marginally affected.
Effect of Bandgap Narrowing on Performance of Modern Power Devices
NAPOLI, ETTORE;
2013-01-01
Abstract
The effect of the bandgap narrowing (BGN) on performance of power devices has been investigated in detail in this paper. The analysis has revealed that the change in the energy band structure caused by bandgap narrowing can strongly affect the conductivity modulation of the bipolar devices resulting in completely different performance. This is due to the modified injection efficiency under high level injection conditions. Using a comprehensive analysis of the injection efficiency in a p-n junction an analytical model for this phenomenon has been developed. Bandgap narrowing model tuning has been proved to be essential in accurately predicting the performance of a Lateral IGBT. Other devices such as PIN diodes or PT IGBTs are significantly affected by the BGN while others, such as FS IGBT or the power MOSFET, are only marginally affected.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
