The degradation of two amorphous silicon based PV modules, namely of single junction amorphous silicon (a-Si) and of micromorph tandem (a-Si/u-Si), after 11 years of exposure in the south of Spain is analyzed. Their I-V curves were measured outdoors to study the changes of the electrical parameters in the course of three different periods: during the initial days of exposure, during the first year, and in the subsequent 10-year period. The translation of the curves to an identical set of operating conditions, which enables a meaningful comparison, was done by the different correction procedures described in the standard IEC60891:2021, including the procedure 3, that does not require the knowledge of module parameters, whose values are typically not available. The annual power degradation rates over the entire 11-year period are 1.12% for the aSi module, which is 3.02% for the first year, and 0.98% for the a--Si/u-Si, which is 2.29% for the initial year.

Analysis of the degradation of amorphous silicon‐based modules after 11 years of exposure by means of IEC60891:2021 procedure 3

Piliougine, Michel
;
Petrone, Giovanni;Spagnuolo, Giovanni;
2022-01-01

Abstract

The degradation of two amorphous silicon based PV modules, namely of single junction amorphous silicon (a-Si) and of micromorph tandem (a-Si/u-Si), after 11 years of exposure in the south of Spain is analyzed. Their I-V curves were measured outdoors to study the changes of the electrical parameters in the course of three different periods: during the initial days of exposure, during the first year, and in the subsequent 10-year period. The translation of the curves to an identical set of operating conditions, which enables a meaningful comparison, was done by the different correction procedures described in the standard IEC60891:2021, including the procedure 3, that does not require the knowledge of module parameters, whose values are typically not available. The annual power degradation rates over the entire 11-year period are 1.12% for the aSi module, which is 3.02% for the first year, and 0.98% for the a--Si/u-Si, which is 2.29% for the initial year.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4783664
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