We studied the temperature dependent transport properties and memory behaviour of ultrathin black phosphorus field-effect transistors. The devices show electrical conductance and field-effect mobility that decreases with the rising temperature. The field effect mobility, which depends also on the gate voltage sweep range, is 283 cm2V−1s−1 at 150K and reduces to 33 cm2V−1s−1 at 340 K, when the voltage gate sweep range is  50 V. The transfer characteristics show a hysteresis width that increases with the temperature and is exploited to enable non-volatile memories with a wider programming window at higher temperatures.

Temperature Dependent Black Phosphorus Transistor and Memory

Kumar, Arun
Writing – Original Draft Preparation
;
Viscardi, Loredana
Investigation
;
Faella, Enver
Investigation
;
Giubileo, Filippo
Investigation
;
Intonti, Kimberly
Formal Analysis
;
Pelella, Aniello
Formal Analysis
;
Di Bartolomeo, Antonio
Writing – Review & Editing
2023-01-01

Abstract

We studied the temperature dependent transport properties and memory behaviour of ultrathin black phosphorus field-effect transistors. The devices show electrical conductance and field-effect mobility that decreases with the rising temperature. The field effect mobility, which depends also on the gate voltage sweep range, is 283 cm2V−1s−1 at 150K and reduces to 33 cm2V−1s−1 at 340 K, when the voltage gate sweep range is  50 V. The transfer characteristics show a hysteresis width that increases with the temperature and is exploited to enable non-volatile memories with a wider programming window at higher temperatures.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4818238
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