We report the photoresponse of niobium diselenide (NbSe2), a transition metal dichalcogenide which exhibits superconducting properties down to a single layer. Devices are built by using micromechanically cleaved 2-10 layers and tested under current bias using nano-optical mapping in the 350 mK-5K range, where they are found to be superconducting. The superconducting state can be perturbed by absorption of light, resulting in a voltage signal when the devices are current biased. The response is found to be energy dependent, making the devices useful for applications requiring energy resolution, such as bolometry, spectroscopy, and infrared imaging.

Niobium diselenide superconducting photodetectors

A. Di Bernardo;
2019-01-01

Abstract

We report the photoresponse of niobium diselenide (NbSe2), a transition metal dichalcogenide which exhibits superconducting properties down to a single layer. Devices are built by using micromechanically cleaved 2-10 layers and tested under current bias using nano-optical mapping in the 350 mK-5K range, where they are found to be superconducting. The superconducting state can be perturbed by absorption of light, resulting in a voltage signal when the devices are current biased. The response is found to be energy dependent, making the devices useful for applications requiring energy resolution, such as bolometry, spectroscopy, and infrared imaging.
2019
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4825815
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