Enhanced photodetection in carbon-based devices with MIS parallel structure

The process of fabricating a silicon junction with a low-dimensional material often requires the development of a parallel metal-insulator-semiconductor (MIS) structure. Although generally overlooked, this MIS structure plays a crucial role in determining the optoelectronic properties of the device. This study focuses on two different devices based on graphene (Gr-device) and carbon nanotubes (CNT-device) that leverage a thin silicon nitride (Si 3 N 4 ) layer to create a parallel MIS structure. This enables the devices to exhibit new optoelectronic features and enhanced photoconduction capabilities.