We report the fabrication and the electrical characterization of back-gated field-effect transistors with a WTe 2 flake as the conductive channel. The temperature dependence of the electrical properties, and their dependence on the flake thickness, are investigated at a low pressure. Current-voltage and transfer characteristics were measured at temperatures from 78 to 300 K. It is shown that the channel conductance is slightly modulated by the gate, but it is strongly affected by the temperature. Our results are promising for the practical applications of WTe 2 based devices to develop a temperature sensor in cryogenic regimes.
Electric Transport Properties In Few-Layers WTe2 Field Effect Transistors Affected by Temperature
Faella, E.
Writing – Original Draft Preparation
;Viscardi, L.Formal Analysis
;Intonti, K.Methodology
;Durante, O.Formal Analysis
;Pelella, A.Formal Analysis
;Lamberti, P.Investigation
;Di Bartolomeo, A.Writing – Review & Editing
2023-01-01
Abstract
We report the fabrication and the electrical characterization of back-gated field-effect transistors with a WTe 2 flake as the conductive channel. The temperature dependence of the electrical properties, and their dependence on the flake thickness, are investigated at a low pressure. Current-voltage and transfer characteristics were measured at temperatures from 78 to 300 K. It is shown that the channel conductance is slightly modulated by the gate, but it is strongly affected by the temperature. Our results are promising for the practical applications of WTe 2 based devices to develop a temperature sensor in cryogenic regimes.File in questo prodotto:
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