InAs nanowire field-effect transistors: temperature dependence of electrical properties and digital electronic applications

We report the fabrication, electrical characterization, and digital applications of back-gated field-effect transistors with a single InAs nanowire as the conductive channel. The devices show n-type conduction with a field-effect mobility higher than 550 cm2V−1s−1 at room temperature. The transfer characteristics exhibit hysteresis width that increases with increasing temperature. The temperature dependence of the electrical properties of InAs nanowires is investigated in the range from 290 to 340 K. The InAs nanowire transistors are exploited for nonvolatile memories and implemented in resistive-load circuits that operate as inverters. Our results are promising for the practical applications of InAs nanowires in the wide field of digital electronics.