The characterization and the experimental measurement of the Berry curvature in solids have become an increasingly relevant task in condensed matter physics. We present the theoretical prediction of a gate tunable anomalous Hall effect (AHE) in a nonmagnetic oxide interface as a hallmark of a nontrivial Berry curvature. The observed AHE at low temperatures in the presence of a planar magnetic field comes from a multiband low-energy model with a generalized Rashba interaction that supports characteristic out-of-plane spin and orbital textures. We also discuss strategies for reconstructing the Berry curvature from the AHE nonlinearities in (111) SrTiO3 heterostructure interfaces.

Gate tunable anomalous Hall effect: Berry curvature probe at oxides interfaces

M. Trama
;
F. Romeo;R. Citro
2022-01-01

Abstract

The characterization and the experimental measurement of the Berry curvature in solids have become an increasingly relevant task in condensed matter physics. We present the theoretical prediction of a gate tunable anomalous Hall effect (AHE) in a nonmagnetic oxide interface as a hallmark of a nontrivial Berry curvature. The observed AHE at low temperatures in the presence of a planar magnetic field comes from a multiband low-energy model with a generalized Rashba interaction that supports characteristic out-of-plane spin and orbital textures. We also discuss strategies for reconstructing the Berry curvature from the AHE nonlinearities in (111) SrTiO3 heterostructure interfaces.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4854328
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