This work focuses on the investigation of a peculiar phenomenon observed in the transfer characteristic of field-effect transistors (FETs) based on two-dimensional Rhenium disulfide (ReS2). This phenomenon entails a step-like feature that leads to an increase of the drain current as the gate voltage increases. The research explores the impact of temperature, gate voltage, and gate current on this step. Noteworthy, the step in the drain current coincides with a peak in the gate current, which emerges beyond a specific temperature. The step in the drain current and the peak in the gate current can be attributed to the thermal-assisted tunnelling from gate oxide traps.
Temperature-induced step-like enhancement of drain current in a two-dimensional ReS2 field-effect transistor
De Stefano S.Writing – Original Draft Preparation
;Durante O.Formal Analysis
;Giubileo F.Formal Analysis
;Faella E.Investigation
;Intonti K.Formal Analysis
;Kumar A.Validation
;Viscardi L.Data Curation
;Di Bartolomeo A.Writing – Review & Editing
2023-01-01
Abstract
This work focuses on the investigation of a peculiar phenomenon observed in the transfer characteristic of field-effect transistors (FETs) based on two-dimensional Rhenium disulfide (ReS2). This phenomenon entails a step-like feature that leads to an increase of the drain current as the gate voltage increases. The research explores the impact of temperature, gate voltage, and gate current on this step. Noteworthy, the step in the drain current coincides with a peak in the gate current, which emerges beyond a specific temperature. The step in the drain current and the peak in the gate current can be attributed to the thermal-assisted tunnelling from gate oxide traps.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
