New states of quantum matter, not directly related to conventional insulators and semiconductors, are represented by topological insulators. Due to a strong contribution of the surface to transport, these compounds have attracted an increasing interest, especially in the nanoscience field. In order to better investigate the effect of intrinsic fluctuations on the surface conduction, a detailed characterization of the low-frequency noise has been made on Bi2Se3 thin films. The experiments have been performed by varying the samples thickness and geometry, in a temperature range from 300 down to 8 K, and as a function of dc bias current and gate voltage.
Topological regime study in Bi2Se3 thin films through electric transport and low-frequency electric noise
Granata V.
Writing – Original Draft Preparation
;Barone C.Writing – Review & Editing
;Carapella G.Formal Analysis
;Pagano S.Writing – Review & Editing
2023-01-01
Abstract
New states of quantum matter, not directly related to conventional insulators and semiconductors, are represented by topological insulators. Due to a strong contribution of the surface to transport, these compounds have attracted an increasing interest, especially in the nanoscience field. In order to better investigate the effect of intrinsic fluctuations on the surface conduction, a detailed characterization of the low-frequency noise has been made on Bi2Se3 thin films. The experiments have been performed by varying the samples thickness and geometry, in a temperature range from 300 down to 8 K, and as a function of dc bias current and gate voltage.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
