Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications.

Multilayer WS2 for low-power visible and near-infrared phototransistors

Pelella, Aniello
Writing – Review & Editing
;
Intonti, Kimberly
Investigation
;
Durante, Ofelia
Investigation
;
Kumar, Arun
Investigation
;
Viscardi, Loredana
Data Curation
;
De Stefano, Sebastiano
Data Curation
;
Romano, Paola
Data Curation
;
Giubileo, Filippo
Data Curation
;
Di Bartolomeo, Antonio
Writing – Review & Editing
2024-01-01

Abstract

Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4861411
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