Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications.
Multilayer WS2 for low-power visible and near-infrared phototransistors
Pelella, AnielloWriting – Review & Editing
;Intonti, KimberlyInvestigation
;Durante, OfeliaInvestigation
;Kumar, ArunInvestigation
;Viscardi, LoredanaData Curation
;De Stefano, SebastianoData Curation
;Romano, PaolaData Curation
;Giubileo, FilippoData Curation
;Di Bartolomeo, AntonioWriting – Review & Editing
2024-01-01
Abstract
Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
