Characterization of 4H-SiC Lateral MOSFETs Up to 773 K

Experimental analysis of 4H-SiC lateral MOSFETs characteristics up to 773K is shown. The reduction of threshold voltage, VTH, and the increase of the field effect channel mobility, µCH, with temperature cause an increase of MOSFET current up to 623K. However, when scattering with lattice vibration starts to be predominant, µCH decreases with an abrupt drop at 773K, reducing MOSFET current. Channel resistance, RCH, decreases with the temperature up to the range between 523 K and 573 K, implying possible thermal instability effects. However, when the temperature increases over this range, the thermal scattering predominates and RCH again increases, ensuring thermal stability of MOSFETs.