BELLONE, Salvatore
 Distribuzione geografica
Continente #
EU - Europa 171
NA - Nord America 41
AS - Asia 30
AF - Africa 9
SA - Sud America 2
Totale 253
Nazione #
FR - Francia 92
IT - Italia 43
US - Stati Uniti d'America 41
CN - Cina 11
UA - Ucraina 10
NL - Olanda 7
GH - Ghana 6
HK - Hong Kong 6
JP - Giappone 6
CZ - Repubblica Ceca 5
RU - Federazione Russa 5
TW - Taiwan 5
DE - Germania 4
TN - Tunisia 3
BR - Brasile 2
FI - Finlandia 2
GB - Regno Unito 2
IN - India 1
RO - Romania 1
TR - Turchia 1
Totale 253
Città #
Salerno 25
Queensbury 12
Clifton Park 11
Novosibirsk 4
Airola 3
Ashburn 3
Central 3
Hanazono 3
Sha Tin Wai 3
Alexandria 2
Beijing 2
Boardman 2
Campinas 2
Coppell 2
Council Bluffs 2
Helsinki 2
London 2
Messina 2
Munich 2
Radès 2
Sevierville 2
Taipei 2
Battipaglia 1
Buffalo 1
Cardito 1
Caserta 1
Craiova 1
Frankfurt am Main 1
Guangzhou 1
New Delhi 1
Osaka 1
Paris 1
Potenza 1
Prague 1
Sannomaru 1
Sivas 1
St Petersburg 1
Sunnyvale 1
Totale 109
Nome #
Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes, file e2915b35-1322-8981-e053-6605fe0a83a3 188
Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range, file e2915b35-27dc-8981-e053-6605fe0a83a3 42
Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET, file e2915b35-2f9e-8981-e053-6605fe0a83a3 12
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates, file e2915b30-f4fe-8981-e053-6605fe0a83a3 4
Design and Performances of 4H−SiC Bipolar Mode Field Effect Transistor (BMFETs), file e2915b31-2a2f-8981-e053-6605fe0a83a3 4
Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications, file e2915b31-8497-8981-e053-6605fe0a83a3 3
Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes, file e2915b35-72d1-8981-e053-6605fe0a83a3 3
Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range, file e2915b35-734b-8981-e053-6605fe0a83a3 3
Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET, file e2915b35-9493-8981-e053-6605fe0a83a3 3
Synthesis and luminescent properties of a new class of nematic oxadiazole containing poly-ethers for PLED, file e2915b30-f4ff-8981-e053-6605fe0a83a3 1
Synthesis and Characterization of a New Class of Nematic Photoluminescent Oxadiazole Containing Polyethers, file e2915b30-f501-8981-e053-6605fe0a83a3 1
Switching device based on a thin film of an azo containing polymer for application in memory cells., file e2915b31-0a3c-8981-e053-6605fe0a83a3 1
A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature, file e2915b31-282f-8981-e053-6605fe0a83a3 1
Totale 266
Categoria #
all - tutte 468
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 468


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201 0 0 0 0 0 0 0 0 0 0 1 0
2021/202225 0 0 0 0 0 0 0 0 0 0 12 13
2022/202331 0 0 4 3 1 2 4 4 6 1 4 2
2023/2024201 0 2 9 18 14 5 47 75 3 19 6 3
Totale 266