UniSa - IRIS Institutional Research Information System

BELLONE, Salvatore
 Distribuzione geografica
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Continente #
NA - Nord America 5.108
EU - Europa 1.865
AS - Asia 1.282
SA - Sud America 197
AF - Africa 5
Continente sconosciuto - Info sul continente non disponibili 4
OC - Oceania 1
Totale 8.462
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Nazione #
US - Stati Uniti d'America 5.086
IT - Italia 679
UA - Ucraina 475
CN - Cina 402
VN - Vietnam 363
SG - Singapore 346
BR - Brasile 177
RU - Federazione Russa 176
DE - Germania 166
IE - Irlanda 125
FI - Finlandia 108
KR - Corea 62
TR - Turchia 60
SE - Svezia 58
NL - Olanda 34
CA - Canada 13
HK - Hong Kong 12
GB - Regno Unito 11
AR - Argentina 9
IN - India 8
AT - Austria 6
FR - Francia 6
JP - Giappone 5
BD - Bangladesh 4
CH - Svizzera 4
CO - Colombia 4
EC - Ecuador 4
EU - Europa 4
IL - Israele 4
LT - Lituania 4
AE - Emirati Arabi Uniti 3
CZ - Repubblica Ceca 3
MX - Messico 3
PL - Polonia 3
RO - Romania 3
DO - Repubblica Dominicana 2
OM - Oman 2
PK - Pakistan 2
PY - Paraguay 2
ZA - Sudafrica 2
AU - Australia 1
AZ - Azerbaigian 1
BB - Barbados 1
BN - Brunei Darussalam 1
CR - Costa Rica 1
DZ - Algeria 1
ES - Italia 1
IQ - Iraq 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
LU - Lussemburgo 1
LV - Lettonia 1
MA - Marocco 1
PA - Panama 1
PE - Perù 1
PH - Filippine 1
RS - Serbia 1
TN - Tunisia 1
TW - Taiwan 1
UZ - Uzbekistan 1
Totale 8.462
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Città #
Ann Arbor 1.296
Wilmington 648
Chandler 624
Jacksonville 577
Dong Ket 363
Princeton 354
Salerno 339
Woodbridge 337
Houston 221
Dublin 123
Singapore 102
Nanjing 101
Andover 95
San Mango 94
Ashburn 82
Boardman 79
Pellezzano 70
Beijing 63
Izmir 56
Moscow 52
Hebei 48
Mestre 34
Fairfield 33
Dearborn 31
Jiaxing 29
Shenyang 28
Changsha 24
Nanchang 24
Rome 24
Düsseldorf 23
Council Bluffs 18
Tianjin 18
Munich 17
Norwalk 15
Los Angeles 13
Hong Kong 12
Dallas 11
Fisciano 11
São Paulo 11
Belo Horizonte 10
Ottawa 10
San Diego 9
Santa Clara 9
The Dalles 9
Guangzhou 8
Washington 8
Meppel 7
Rio de Janeiro 7
Turku 7
Charlotte 6
Columbus 6
Grumo Nevano 6
Phoenix 6
Pune 6
Shanghai 6
Stockholm 6
Amsterdam 5
Avellino 5
Chicago 5
Hefei 5
Napoli 5
San Francisco 5
Brooklyn 4
Cambridge 4
Des Moines 4
Dronten 4
Jinan 4
Naples 4
Nuremberg 4
Seattle 4
Spinea 4
Brno 3
Fortaleza 3
Fuzhou 3
Helsinki 3
London 3
New York 3
Redmond 3
Redwood City 3
Salvador 3
Abaetetuba 2
Airola 2
Araxá 2
Arzano 2
Asunción 2
Bucharest 2
Buenos Aires 2
Castelli Calepio 2
Chiswick 2
Conselheiro Lafaiete 2
Dubai 2
Gaithersburg 2
Hanover 2
Indiana 2
Kirkland 2
Medellín 2
Mogi Guaçu 2
Muscat 2
Natal 2
Ningbo 2
Totale 6.359
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Nome #
Synthesis and Characterization of a New Class of Nematic Photoluminescent Oxadiazole Containing Polyethers 187
Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes 169
Blue emitting OLED with oxadiazole/carbazole containing active layer 151
Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range 148
A Self-consistent Model of the Static and Switching Behaviour of 4H-SiC Diodes 143
A Self-Consistent Model of the OCVD Behaviour of Si and 4H-SiC P+-N-N+ Diodes 132
A Circuital Model of Switching Behaviour of 4H-SiC p + -n-n + Diodes Valid at any Current and Temperature 132
Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications 129
An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions 125
A Novel Measurement Method of the Spatial Carrier Lifetime Profile Based on the OCVD Technique 123
A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs 123
An Analog Circuit for Accurate OCVD Measurements 122
Design and Performances of 4H−SiC Bipolar Mode Field Effect Transistor (BMFETs) 122
Blue Emitting OLED with oxadiazole/carbazole containing active layer 120
Analytical description of the input capacitance of 4H-SiC DMOSFET’s in presence of oxide-semiconductor interface traps 118
Synthesis and luminescent properties of a new class of nematic oxadiazole containing poly-ethers for PLED 114
An analytical model of the potential barrier for the ID-VGS curves calculation of 4H-SiC Bipolar JFETs 113
Analytical prediction of the cross−over point in the temperature coefficient of the forward characteristics of 4H−SiC p+−i−n diodes 113
A Model of the ID-VGS Characteristics of Normally-Off 4H-SiC Bipolar JFETs 111
A model of the off-behaviour of 4H–SiC power JFETs 111
Synthesis and characterization of new electroluminescent molecules containing carbazole and oxadiazole units 110
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode 109
Electronic Devices based on thin films and nanostructures 108
Switching device based on a thin film of an azo containing polymer for application in memory cells. 105
Al+ Implanted Anode for 4H-SiC p-i-n Diodes 103
Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET 102
Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell 98
AZO CONTAINING POLYMER AS ACTIVE LAYERIN MEMORY CELLS PROTOTYPES 97
Blue electroluminescence from films of poly(n-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 97
Electrical Characterization of Very Thin Si Epitaxial Layers used for Bipolar VLSI 97
AN ANALYTICAL MODEL OF AN OCVD-BASED MEASUREMENT TECHNIQUE OFTHE LOCAL CARRIER LIFETIME 96
Polymer Processing in OLED Application 95
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 91
Blue electroluminescence from films of poly(N-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 90
Analytical Model of GaAs BMFET Structures 90
Temperature Dependency of the Forward Characteristics of 4H-SiC DMOSFETin Presence of SiO2/SiC Interface Traps 90
A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature 89
A Measurement method of the ideal I-V characteristics of diodes up to the built-in voltage limit 88
Electrical Characterization of Minority Carrier Recombination Phenomena in Silicon 88
On the analogy of the potential barrier of trenched JFET and JBS devices 88
The effect of ITO surface energy on OLED electrical porperties 87
Extension of the TPA Method for the Exact Analysis of Feedback Circuits in Terms of the Return Ratio 86
On the Crossing-Point of 4H-SiC Power Diodes Chararacteristics 85
Analysis of a New Test Structures for Carrier-Carrier Scattering Mobilities versus Injection Level in Silicon 83
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs 83
Physical Model, Measurement set-up and experiments of a Measurement technique of the carrier lifetime Profile in Power devices 82
Experimental measurements of Majority and Minority Carrier Lifetime Profile in Si- epilayers by the use of an improved OCVD method 81
Stability of amorphous silicon films and a-Si:H/c-Si heterojunctions under high energy particle irradiation 81
Test structure Design for the Evaluation of Carrier-Carrier Scattering Effect on Hole and Electron Mobilities 81
A Measurement Method of the Injection Level Dependence of the Conductivity Mobility in Silicon 81
An Analytical Model for p+-n-n+ (n+-p-p+) Epitaxial Diodes Valid from Low to High Injection Levels 81
On the Electrical Behavior of V2O5/4H-SiC Schottky Diodes 81
A new Measurement Technique for the Conductivity Mobility versus Injection Level in Silicon 80
A Quasi-one Dimensional Analysis of Vertical JFET Device Operated in the Bipolar Mode 80
A New Method for the Measurement of the Conductivity Mobility as a Function of the Injection Level in Silicon Regions 80
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 79
Efficient low temperature cSi surface passivation using aSi grown by PECVD 79
LIMITATIONS OF THE OPEN-CIRCUIT VOLTAGE DECAY TECHNIQUE APPLIED TO 4H-SIC DIODES 79
Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures 78
A 50W, 50MHz Conductivity Controlled Transistor 78
A New Test Structure for in-depth Lifetime Profiling of Thin Si Epitaxial Layers 77
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 76
Current Gain Enhancement Effect by Gate Doping in Bipolar Mode Field Effect Transistor 75
A Two-dimensional Analytical Model of Homojunction GaAs BMFET Structures 74
Analytical Model for GaAs PIN diodes for a Wide Range of Currents and Temperatures 74
An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current 73
Experimental Characterization of the Effective Recombination Velocity at the High-Low Transition of BSF Silicon Solar Cells 73
An Analysis of Thermal Behaviour of Bipolar-Mode JFET's 72
Modelling and characterisation of the input I-V curves of the Bipolar Jfet structures showing a negative Resistance behaviour 71
Analytical Model of the Effective Recombination Velocity of Diffused p-p+ (n-n+) High-Low Junctions at Artbitrary Injection Level 71
Two-Port Analysis of Feedback Circuits in Terms of the Return Ratio 70
A New Test Structure for the Evaluation of the Injection - Level Dependence of Carrier Mobilities 70
Modeling and Characterization of the OCVD Response at an Arbitrary Time and Injection Level 69
Investigation of 4H-SiC Bipolar Mode Field Effect Transistor (BMFET) as High Power Transistor 69
Characterization of Very Thin Epitaxial Layers 69
A New Test Structure for Recombination Measurements in Thin Silicon Layers for VLSI Structures 68
Recombination Lifetime Profiling in Very Thin Silicon Epitaxial Layers used for Bipolar VLSI 66
Experimental Analysis of the Temperature Dependence of the S.H.R. Lifetime and of the Apparent Bandgap Narrowing in n-type Silicon 65
Electrical Characterization of Polysilicon/Monosilicon Interfaces 65
Performance analysis of a normally-off 4H-SiC trench bipolar-mode FET for power applications 64
Power Handling Capabilities of a New Device: the Conductivity Controlled Transistor 64
Numerical simulations of a 4H-SiC BMFET power transistors with normally-off characteristics 63
Recombination Measurement of n-type Heavily Doped Layer in High-Low Silicon Junctions 62
Experimental Detection of Module Failure in Large Photovoltaic Arrays: Application to the Delphos Photovoltaic Plant 62
Dispositivi per la conversione termofotovoltaica 62
Modello Analitico dei diodi P+-N-N+ alle Medie Correnti 60
On the Saturation Voltage of Bipolar Mode Vertical Jfet's 60
Realization of a Normally-off Power Biopolar Mode JFET's 59
Drain Current Optimization for a Very High Voltage Fast Switch Device with Bipolar Mode Jfet Structure 59
Measurement of the Effective Recombination Velocity of Semiconductor High-Low Transitions 58
Electrical Characterization of Minority Carrier Recombination at the Polysilicon/Silicon Interface 56
Electrical Characterization of minority carrier transport parameters in n-type heavily doped silicon 56
Comments on Direct Experimental Determination of Voltage Across High-Low Junctions 54
On-State Modeling of Power JFET Structures in the Bipolar Mode 54
Detection of Recombination Centers in Epitaxial Layers by Temperature Scanning and Depth Lifetime Profiling 53
Electrical Characteristics of the Conductivity Controlled Transistor as a Power Device Structure 52
Electrical Measurement of Electron and Hole Mobilities as a Function of Injection Level in Silicon 49
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by means of a Special Test Structure 49
High-Voltage Bipolar Model JFET with normally-off Characteristics 44
Totale 8.649
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Categoria #
all - tutte 25.875
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 25.875
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021982 5 96 96 0 105 12 99 0 94 0 101 374
2021/2022692 0 0 4 2 18 22 9 19 100 92 136 290
2022/20231.285 117 93 22 159 159 269 25 165 196 1 50 29
2023/2024303 44 66 18 10 18 26 8 9 0 14 24 66
2024/20251.042 55 20 18 53 44 130 202 154 115 31 146 74
2025/202619 19 0 0 0 0 0 0 0 0 0 0 0
Totale 8.649