UniSa - IRIS Institutional Research Information System

BELLONE, Salvatore
 Distribuzione geografica
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Continente #
NA - Nord America 5.554
AS - Asia 4.636
EU - Europa 1.946
SA - Sud America 235
AF - Africa 16
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 4
Totale 12.396
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Nazione #
US - Stati Uniti d'America 5.517
HK - Hong Kong 2.900
IT - Italia 684
SG - Singapore 631
CN - Cina 522
UA - Ucraina 476
VN - Vietnam 386
BR - Brasile 202
RU - Federazione Russa 178
DE - Germania 174
IE - Irlanda 125
FI - Finlandia 121
KR - Corea 65
SE - Svezia 64
TR - Turchia 61
NL - Olanda 34
GB - Regno Unito 29
CA - Canada 21
IN - India 21
AR - Argentina 17
JP - Giappone 13
ES - Italia 10
PL - Polonia 10
ZA - Sudafrica 10
LT - Lituania 9
MX - Messico 9
BD - Bangladesh 7
FR - Francia 7
AT - Austria 6
EC - Ecuador 6
CH - Svizzera 5
CO - Colombia 5
IL - Israele 5
CZ - Repubblica Ceca 4
EU - Europa 4
AE - Emirati Arabi Uniti 3
RO - Romania 3
AU - Australia 2
CL - Cile 2
DO - Repubblica Dominicana 2
IQ - Iraq 2
LA - Repubblica Popolare Democratica del Laos 2
MA - Marocco 2
MY - Malesia 2
OM - Oman 2
PK - Pakistan 2
PY - Paraguay 2
AD - Andorra 1
AO - Angola 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BN - Brunei Darussalam 1
CR - Costa Rica 1
CU - Cuba 1
DZ - Algeria 1
ID - Indonesia 1
IR - Iran 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
LU - Lussemburgo 1
LV - Lettonia 1
ME - Montenegro 1
NC - Nuova Caledonia 1
PA - Panama 1
PE - Perù 1
PG - Papua Nuova Guinea 1
PH - Filippine 1
PT - Portogallo 1
RS - Serbia 1
SA - Arabia Saudita 1
SN - Senegal 1
TN - Tunisia 1
TW - Taiwan 1
UZ - Uzbekistan 1
XK - ???statistics.table.value.countryCode.XK??? 1
YE - Yemen 1
Totale 12.396
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Città #
Hong Kong 2.900
Ann Arbor 1.296
Wilmington 648
Chandler 624
Jacksonville 577
Dong Ket 363
Princeton 354
Salerno 339
Woodbridge 337
Singapore 247
Dallas 233
Houston 225
Ashburn 125
Dublin 123
Nanjing 101
Andover 95
San Mango 94
Beijing 85
Boardman 79
Pellezzano 70
Izmir 56
Moscow 53
Hebei 48
Mestre 34
Fairfield 33
Dearborn 31
Jiaxing 29
Shenyang 28
Council Bluffs 27
Los Angeles 26
Rome 26
Changsha 25
Nanchang 24
Düsseldorf 23
Munich 22
New York 21
São Paulo 19
Tianjin 18
Turku 17
Norwalk 15
Santa Clara 15
Brooklyn 12
Fisciano 12
Stockholm 12
The Dalles 11
Belo Horizonte 10
Chicago 10
Ottawa 10
Phoenix 10
Atlanta 9
Chennai 9
San Diego 9
Shanghai 9
Warsaw 9
Guangzhou 8
Rio de Janeiro 8
Tokyo 8
Washington 8
Boston 7
Charlotte 7
Ho Chi Minh City 7
Johannesburg 7
Meppel 7
Columbus 6
Grumo Nevano 6
Helsinki 6
London 6
Manchester 6
Pune 6
San Francisco 6
Amsterdam 5
Avellino 5
Des Moines 5
Hanoi 5
Hefei 5
Napoli 5
Orem 5
Brno 4
Cambridge 4
Dronten 4
Fortaleza 4
Jinan 4
Montreal 4
Naples 4
Nuremberg 4
Seattle 4
Spinea 4
Toronto 4
Curitiba 3
Denver 3
Frankfurt am Main 3
Fuzhou 3
Laboulaye 3
Mumbai 3
Paris 3
Poplar 3
Redmond 3
Redwood City 3
Salvador 3
Seoul 3
Totale 9.861
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Nome #
A Circuital Model of Switching Behaviour of 4H-SiC p + -n-n + Diodes Valid at any Current and Temperature 810
A Measurement Method of the Injection Level Dependence of the Conductivity Mobility in Silicon 590
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs 419
A Self-Consistent Model of the OCVD Behaviour of Si and 4H-SiC P+-N-N+ Diodes 410
A Measurement method of the ideal I-V characteristics of diodes up to the built-in voltage limit 358
LIMITATIONS OF THE OPEN-CIRCUIT VOLTAGE DECAY TECHNIQUE APPLIED TO 4H-SIC DIODES 304
Analytical prediction of the cross−over point in the temperature coefficient of the forward characteristics of 4H−SiC p+−i−n diodes 216
A New Test Structure for Recombination Measurements in Thin Silicon Layers for VLSI Structures 208
Synthesis and Characterization of a New Class of Nematic Photoluminescent Oxadiazole Containing Polyethers 198
Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell 198
A New Method for the Measurement of the Conductivity Mobility as a Function of the Injection Level in Silicon Regions 185
Blue emitting OLED with oxadiazole/carbazole containing active layer 183
Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes 177
A Novel Measurement Method of the Spatial Carrier Lifetime Profile Based on the OCVD Technique 164
A Self-consistent Model of the Static and Switching Behaviour of 4H-SiC Diodes 163
Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range 162
Blue electroluminescence from films of poly(n-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 161
Blue Emitting OLED with oxadiazole/carbazole containing active layer 156
A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs 152
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode 148
Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications 142
An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions 140
A Model of the ID-VGS Characteristics of Normally-Off 4H-SiC Bipolar JFETs 138
A model of the off-behaviour of 4H–SiC power JFETs 136
Analytical description of the input capacitance of 4H-SiC DMOSFET’s in presence of oxide-semiconductor interface traps 135
An Analog Circuit for Accurate OCVD Measurements 130
Synthesis and characterization of new electroluminescent molecules containing carbazole and oxadiazole units 129
Design and Performances of 4H−SiC Bipolar Mode Field Effect Transistor (BMFETs) 128
Synthesis and luminescent properties of a new class of nematic oxadiazole containing poly-ethers for PLED 126
An analytical model of the potential barrier for the ID-VGS curves calculation of 4H-SiC Bipolar JFETs 124
Electronic Devices based on thin films and nanostructures 122
AZO CONTAINING POLYMER AS ACTIVE LAYERIN MEMORY CELLS PROTOTYPES 122
A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature 120
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 116
Al+ Implanted Anode for 4H-SiC p-i-n Diodes 115
Switching device based on a thin film of an azo containing polymer for application in memory cells. 113
A Quasi-one Dimensional Analysis of Vertical JFET Device Operated in the Bipolar Mode 113
Blue electroluminescence from films of poly(N-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 112
Electrical Characterization of Very Thin Si Epitaxial Layers used for Bipolar VLSI 111
Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET 110
A new Measurement Technique for the Conductivity Mobility versus Injection Level in Silicon 109
Polymer Processing in OLED Application 107
AN ANALYTICAL MODEL OF AN OCVD-BASED MEASUREMENT TECHNIQUE OFTHE LOCAL CARRIER LIFETIME 104
A 50W, 50MHz Conductivity Controlled Transistor 102
Electrical Characterization of Minority Carrier Recombination Phenomena in Silicon 99
Temperature Dependency of the Forward Characteristics of 4H-SiC DMOSFETin Presence of SiO2/SiC Interface Traps 99
On the analogy of the potential barrier of trenched JFET and JBS devices 99
Analytical Model of GaAs BMFET Structures 98
A New Test Structure for in-depth Lifetime Profiling of Thin Si Epitaxial Layers 96
Stability of amorphous silicon films and a-Si:H/c-Si heterojunctions under high energy particle irradiation 95
The effect of ITO surface energy on OLED electrical porperties 95
On the Crossing-Point of 4H-SiC Power Diodes Chararacteristics 95
A New Test Structure for the Evaluation of the Injection - Level Dependence of Carrier Mobilities 94
Physical Model, Measurement set-up and experiments of a Measurement technique of the carrier lifetime Profile in Power devices 93
Extension of the TPA Method for the Exact Analysis of Feedback Circuits in Terms of the Return Ratio 93
Efficient low temperature cSi surface passivation using aSi grown by PECVD 92
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 91
Experimental measurements of Majority and Minority Carrier Lifetime Profile in Si- epilayers by the use of an improved OCVD method 91
On the Electrical Behavior of V2O5/4H-SiC Schottky Diodes 91
Analysis of a New Test Structures for Carrier-Carrier Scattering Mobilities versus Injection Level in Silicon 90
An Analytical Model for p+-n-n+ (n+-p-p+) Epitaxial Diodes Valid from Low to High Injection Levels 90
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 88
Test structure Design for the Evaluation of Carrier-Carrier Scattering Effect on Hole and Electron Mobilities 87
Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures 86
An Analysis of Thermal Behaviour of Bipolar-Mode JFET's 84
A Two-dimensional Analytical Model of Homojunction GaAs BMFET Structures 82
Two-Port Analysis of Feedback Circuits in Terms of the Return Ratio 82
Experimental Characterization of the Effective Recombination Velocity at the High-Low Transition of BSF Silicon Solar Cells 82
Analytical Model for GaAs PIN diodes for a Wide Range of Currents and Temperatures 81
Current Gain Enhancement Effect by Gate Doping in Bipolar Mode Field Effect Transistor 81
Modeling and Characterization of the OCVD Response at an Arbitrary Time and Injection Level 80
Analytical Model of the Effective Recombination Velocity of Diffused p-p+ (n-n+) High-Low Junctions at Artbitrary Injection Level 80
Modelling and characterisation of the input I-V curves of the Bipolar Jfet structures showing a negative Resistance behaviour 79
An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current 77
Investigation of 4H-SiC Bipolar Mode Field Effect Transistor (BMFET) as High Power Transistor 76
Characterization of Very Thin Epitaxial Layers 75
Power Handling Capabilities of a New Device: the Conductivity Controlled Transistor 75
Recombination Lifetime Profiling in Very Thin Silicon Epitaxial Layers used for Bipolar VLSI 73
Experimental Analysis of the Temperature Dependence of the S.H.R. Lifetime and of the Apparent Bandgap Narrowing in n-type Silicon 71
Numerical simulations of a 4H-SiC BMFET power transistors with normally-off characteristics 71
Experimental Detection of Module Failure in Large Photovoltaic Arrays: Application to the Delphos Photovoltaic Plant 71
Electrical Characterization of Polysilicon/Monosilicon Interfaces 71
Performance analysis of a normally-off 4H-SiC trench bipolar-mode FET for power applications 70
Recombination Measurement of n-type Heavily Doped Layer in High-Low Silicon Junctions 69
Dispositivi per la conversione termofotovoltaica 69
Modello Analitico dei diodi P+-N-N+ alle Medie Correnti 68
On the Saturation Voltage of Bipolar Mode Vertical Jfet's 67
Electrical Characterization of Minority Carrier Recombination at the Polysilicon/Silicon Interface 66
Measurement of the Effective Recombination Velocity of Semiconductor High-Low Transitions 65
Electrical Characterization of minority carrier transport parameters in n-type heavily doped silicon 64
Drain Current Optimization for a Very High Voltage Fast Switch Device with Bipolar Mode Jfet Structure 64
Realization of a Normally-off Power Biopolar Mode JFET's 63
Comments on Direct Experimental Determination of Voltage Across High-Low Junctions 62
Electrical Characteristics of the Conductivity Controlled Transistor as a Power Device Structure 60
On-State Modeling of Power JFET Structures in the Bipolar Mode 59
Detection of Recombination Centers in Epitaxial Layers by Temperature Scanning and Depth Lifetime Profiling 58
Electrical Measurement of Electron and Hole Mobilities as a Function of Injection Level in Silicon 56
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by means of a Special Test Structure 54
High-Voltage Bipolar Model JFET with normally-off Characteristics 50
Totale 12.583
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Categoria #
all - tutte 34.885
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 34.885
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021785 0 0 0 0 105 12 99 0 94 0 101 374
2021/2022692 0 0 4 2 18 22 9 19 100 92 136 290
2022/20231.285 117 93 22 159 159 269 25 165 196 1 50 29
2023/2024303 44 66 18 10 18 26 8 9 0 14 24 66
2024/20251.042 55 20 18 53 44 130 202 154 115 31 146 74
2025/20263.953 307 1.654 1.436 176 380 0 0 0 0 0 0 0
Totale 12.583