UniSa - IRIS Institutional Research Information System

BELLONE, Salvatore
 Distribuzione geografica
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Continente #
NA - Nord America 4.994
EU - Europa 1.821
AS - Asia 1.235
SA - Sud America 165
AF - Africa 4
Continente sconosciuto - Info sul continente non disponibili 4
Totale 8.223
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Nazione #
US - Stati Uniti d'America 4.981
IT - Italia 679
UA - Ucraina 475
CN - Cina 381
VN - Vietnam 363
SG - Singapore 330
RU - Federazione Russa 176
BR - Brasile 149
DE - Germania 149
IE - Irlanda 125
FI - Finlandia 101
KR - Corea 62
TR - Turchia 60
SE - Svezia 53
NL - Olanda 30
CA - Canada 10
AR - Argentina 8
GB - Regno Unito 8
IN - India 7
AT - Austria 5
JP - Giappone 5
CH - Svizzera 4
EU - Europa 4
FR - Francia 4
HK - Hong Kong 4
IL - Israele 4
AE - Emirati Arabi Uniti 3
BD - Bangladesh 3
CO - Colombia 3
CZ - Repubblica Ceca 3
EC - Ecuador 3
RO - Romania 3
OM - Oman 2
PK - Pakistan 2
AZ - Azerbaigian 1
BN - Brunei Darussalam 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
ES - Italia 1
IQ - Iraq 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
LT - Lituania 1
LU - Lussemburgo 1
LV - Lettonia 1
MA - Marocco 1
MX - Messico 1
PE - Perù 1
PH - Filippine 1
PL - Polonia 1
PY - Paraguay 1
RS - Serbia 1
TN - Tunisia 1
TW - Taiwan 1
UZ - Uzbekistan 1
ZA - Sudafrica 1
Totale 8.223
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Città #
Ann Arbor 1.296
Wilmington 648
Chandler 624
Jacksonville 577
Dong Ket 363
Princeton 354
Salerno 339
Woodbridge 337
Houston 221
Dublin 123
Nanjing 101
Andover 95
San Mango 94
Singapore 86
Boardman 79
Ashburn 75
Pellezzano 70
Izmir 56
Moscow 52
Hebei 48
Beijing 43
Mestre 34
Fairfield 33
Dearborn 31
Jiaxing 29
Shenyang 28
Changsha 24
Nanchang 24
Rome 24
Düsseldorf 23
Tianjin 18
Council Bluffs 16
Norwalk 15
Fisciano 11
Ottawa 10
Dallas 9
San Diego 9
Belo Horizonte 8
Guangzhou 8
Washington 8
Meppel 7
Grumo Nevano 6
Pune 6
Rio de Janeiro 6
Shanghai 6
São Paulo 6
Avellino 5
Hefei 5
Napoli 5
Cambridge 4
Des Moines 4
Dronten 4
Hong Kong 4
Jinan 4
Los Angeles 4
Naples 4
Nuremberg 4
Seattle 4
Spinea 4
Brno 3
Fuzhou 3
Helsinki 3
Redmond 3
Redwood City 3
Salvador 3
Santa Clara 3
Abaetetuba 2
Airola 2
Arzano 2
Bucharest 2
Castelli Calepio 2
Chiswick 2
Dubai 2
Fortaleza 2
Gaithersburg 2
Hanover 2
Indiana 2
Kirkland 2
Medellín 2
Muscat 2
Ningbo 2
Palermo 2
Rio Grande 2
San Francisco 2
Simi Valley 2
Sorocaba 2
Sumaré 2
Swindon 2
São José 2
Taubaté 2
Tel Aviv 2
Torre Annunziata 2
Varginha 2
Vienna 2
Yubileyny 2
Adana 1
Agudos 1
Ajman 1
Alto Verê 1
Alytus 1
Totale 6.219
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Nome #
Synthesis and Characterization of a New Class of Nematic Photoluminescent Oxadiazole Containing Polyethers 183
Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes 167
Blue emitting OLED with oxadiazole/carbazole containing active layer 147
Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range 143
A Self-consistent Model of the Static and Switching Behaviour of 4H-SiC Diodes 142
A Self-Consistent Model of the OCVD Behaviour of Si and 4H-SiC P+-N-N+ Diodes 127
An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions 122
Design and Performances of 4H−SiC Bipolar Mode Field Effect Transistor (BMFETs) 121
An Analog Circuit for Accurate OCVD Measurements 120
A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs 120
A Circuital Model of Switching Behaviour of 4H-SiC p + -n-n + Diodes Valid at any Current and Temperature 119
Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications 119
Analytical description of the input capacitance of 4H-SiC DMOSFET’s in presence of oxide-semiconductor interface traps 116
Blue Emitting OLED with oxadiazole/carbazole containing active layer 115
A Novel Measurement Method of the Spatial Carrier Lifetime Profile Based on the OCVD Technique 114
Synthesis and luminescent properties of a new class of nematic oxadiazole containing poly-ethers for PLED 113
An analytical model of the potential barrier for the ID-VGS curves calculation of 4H-SiC Bipolar JFETs 112
Analytical prediction of the cross−over point in the temperature coefficient of the forward characteristics of 4H−SiC p+−i−n diodes 111
Synthesis and characterization of new electroluminescent molecules containing carbazole and oxadiazole units 108
A Model of the ID-VGS Characteristics of Normally-Off 4H-SiC Bipolar JFETs 106
A model of the off-behaviour of 4H–SiC power JFETs 106
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode 106
Electronic Devices based on thin films and nanostructures 104
Switching device based on a thin film of an azo containing polymer for application in memory cells. 104
Al+ Implanted Anode for 4H-SiC p-i-n Diodes 102
Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET 101
Electrical Characterization of Very Thin Si Epitaxial Layers used for Bipolar VLSI 96
Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell 95
AN ANALYTICAL MODEL OF AN OCVD-BASED MEASUREMENT TECHNIQUE OFTHE LOCAL CARRIER LIFETIME 95
Polymer Processing in OLED Application 94
AZO CONTAINING POLYMER AS ACTIVE LAYERIN MEMORY CELLS PROTOTYPES 92
Blue electroluminescence from films of poly(n-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 92
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 89
Temperature Dependency of the Forward Characteristics of 4H-SiC DMOSFETin Presence of SiO2/SiC Interface Traps 89
Analytical Model of GaAs BMFET Structures 88
Electrical Characterization of Minority Carrier Recombination Phenomena in Silicon 87
A Measurement method of the ideal I-V characteristics of diodes up to the built-in voltage limit 86
A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature 85
On the analogy of the potential barrier of trenched JFET and JBS devices 85
The effect of ITO surface energy on OLED electrical porperties 84
On the Crossing-Point of 4H-SiC Power Diodes Chararacteristics 84
Extension of the TPA Method for the Exact Analysis of Feedback Circuits in Terms of the Return Ratio 83
Analysis of a New Test Structures for Carrier-Carrier Scattering Mobilities versus Injection Level in Silicon 82
Blue electroluminescence from films of poly(N-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 82
Physical Model, Measurement set-up and experiments of a Measurement technique of the carrier lifetime Profile in Power devices 81
Stability of amorphous silicon films and a-Si:H/c-Si heterojunctions under high energy particle irradiation 80
Test structure Design for the Evaluation of Carrier-Carrier Scattering Effect on Hole and Electron Mobilities 80
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs 80
An Analytical Model for p+-n-n+ (n+-p-p+) Epitaxial Diodes Valid from Low to High Injection Levels 80
On the Electrical Behavior of V2O5/4H-SiC Schottky Diodes 80
Experimental measurements of Majority and Minority Carrier Lifetime Profile in Si- epilayers by the use of an improved OCVD method 79
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 78
A Measurement Method of the Injection Level Dependence of the Conductivity Mobility in Silicon 78
LIMITATIONS OF THE OPEN-CIRCUIT VOLTAGE DECAY TECHNIQUE APPLIED TO 4H-SIC DIODES 78
Efficient low temperature cSi surface passivation using aSi grown by PECVD 77
Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures 77
A Quasi-one Dimensional Analysis of Vertical JFET Device Operated in the Bipolar Mode 77
A new Measurement Technique for the Conductivity Mobility versus Injection Level in Silicon 76
A New Method for the Measurement of the Conductivity Mobility as a Function of the Injection Level in Silicon Regions 75
A 50W, 50MHz Conductivity Controlled Transistor 75
Current Gain Enhancement Effect by Gate Doping in Bipolar Mode Field Effect Transistor 74
Analytical Model for GaAs PIN diodes for a Wide Range of Currents and Temperatures 73
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 72
A Two-dimensional Analytical Model of Homojunction GaAs BMFET Structures 72
An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current 72
A New Test Structure for in-depth Lifetime Profiling of Thin Si Epitaxial Layers 72
An Analysis of Thermal Behaviour of Bipolar-Mode JFET's 71
Experimental Characterization of the Effective Recombination Velocity at the High-Low Transition of BSF Silicon Solar Cells 71
Modelling and characterisation of the input I-V curves of the Bipolar Jfet structures showing a negative Resistance behaviour 70
Analytical Model of the Effective Recombination Velocity of Diffused p-p+ (n-n+) High-Low Junctions at Artbitrary Injection Level 70
Two-Port Analysis of Feedback Circuits in Terms of the Return Ratio 69
Investigation of 4H-SiC Bipolar Mode Field Effect Transistor (BMFET) as High Power Transistor 68
A New Test Structure for the Evaluation of the Injection - Level Dependence of Carrier Mobilities 68
Characterization of Very Thin Epitaxial Layers 68
Modeling and Characterization of the OCVD Response at an Arbitrary Time and Injection Level 66
A New Test Structure for Recombination Measurements in Thin Silicon Layers for VLSI Structures 65
Recombination Lifetime Profiling in Very Thin Silicon Epitaxial Layers used for Bipolar VLSI 64
Experimental Analysis of the Temperature Dependence of the S.H.R. Lifetime and of the Apparent Bandgap Narrowing in n-type Silicon 64
Power Handling Capabilities of a New Device: the Conductivity Controlled Transistor 63
Numerical simulations of a 4H-SiC BMFET power transistors with normally-off characteristics 62
Recombination Measurement of n-type Heavily Doped Layer in High-Low Silicon Junctions 61
Experimental Detection of Module Failure in Large Photovoltaic Arrays: Application to the Delphos Photovoltaic Plant 61
Electrical Characterization of Polysilicon/Monosilicon Interfaces 61
Dispositivi per la conversione termofotovoltaica 61
Performance analysis of a normally-off 4H-SiC trench bipolar-mode FET for power applications 61
On the Saturation Voltage of Bipolar Mode Vertical Jfet's 59
Modello Analitico dei diodi P+-N-N+ alle Medie Correnti 58
Realization of a Normally-off Power Biopolar Mode JFET's 58
Measurement of the Effective Recombination Velocity of Semiconductor High-Low Transitions 57
Drain Current Optimization for a Very High Voltage Fast Switch Device with Bipolar Mode Jfet Structure 56
Electrical Characterization of Minority Carrier Recombination at the Polysilicon/Silicon Interface 55
Electrical Characterization of minority carrier transport parameters in n-type heavily doped silicon 54
Comments on Direct Experimental Determination of Voltage Across High-Low Junctions 53
On-State Modeling of Power JFET Structures in the Bipolar Mode 53
Electrical Characteristics of the Conductivity Controlled Transistor as a Power Device Structure 51
Detection of Recombination Centers in Epitaxial Layers by Temperature Scanning and Depth Lifetime Profiling 51
Electrical Measurement of Electron and Hole Mobilities as a Function of Injection Level in Silicon 48
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by means of a Special Test Structure 48
High-Voltage Bipolar Model JFET with normally-off Characteristics 43
Totale 8.410
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Categoria #
all - tutte 24.474
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 24.474
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020136 0 0 0 0 0 0 0 0 0 0 124 12
2020/2021982 5 96 96 0 105 12 99 0 94 0 101 374
2021/2022692 0 0 4 2 18 22 9 19 100 92 136 290
2022/20231.285 117 93 22 159 159 269 25 165 196 1 50 29
2023/2024303 44 66 18 10 18 26 8 9 0 14 24 66
2024/2025822 55 20 18 53 44 130 202 154 115 31 0 0
Totale 8.410