UniSa - IRIS Institutional Research Information System

BELLONE, Salvatore
 Distribuzione geografica
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Continente #
NA - Nord America 5.417
AS - Asia 4.265
EU - Europa 1.899
SA - Sud America 215
AF - Africa 8
Continente sconosciuto - Info sul continente non disponibili 4
OC - Oceania 3
Totale 11.811
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Nazione #
US - Stati Uniti d'America 5.388
HK - Hong Kong 2.899
IT - Italia 680
UA - Ucraina 476
CN - Cina 465
VN - Vietnam 364
SG - Singapore 363
BR - Brasile 194
RU - Federazione Russa 176
DE - Germania 171
IE - Irlanda 125
FI - Finlandia 108
KR - Corea 62
SE - Svezia 60
TR - Turchia 60
NL - Olanda 34
GB - Regno Unito 20
CA - Canada 17
IN - India 11
AR - Argentina 9
JP - Giappone 9
LT - Lituania 8
PL - Polonia 7
AT - Austria 6
FR - Francia 6
BD - Bangladesh 5
CH - Svizzera 5
CO - Colombia 5
ES - Italia 5
IL - Israele 5
MX - Messico 5
EC - Ecuador 4
EU - Europa 4
AE - Emirati Arabi Uniti 3
CZ - Repubblica Ceca 3
RO - Romania 3
ZA - Sudafrica 3
AU - Australia 2
DO - Repubblica Dominicana 2
IQ - Iraq 2
LA - Repubblica Popolare Democratica del Laos 2
MA - Marocco 2
OM - Oman 2
PK - Pakistan 2
PY - Paraguay 2
AD - Andorra 1
AZ - Azerbaigian 1
BB - Barbados 1
BN - Brunei Darussalam 1
CR - Costa Rica 1
CU - Cuba 1
DZ - Algeria 1
ID - Indonesia 1
IR - Iran 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
LU - Lussemburgo 1
LV - Lettonia 1
ME - Montenegro 1
PA - Panama 1
PE - Perù 1
PG - Papua Nuova Guinea 1
PH - Filippine 1
PT - Portogallo 1
RS - Serbia 1
SN - Senegal 1
TN - Tunisia 1
TW - Taiwan 1
UZ - Uzbekistan 1
YE - Yemen 1
Totale 11.811
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Città #
Hong Kong 2.899
Ann Arbor 1.296
Wilmington 648
Chandler 624
Jacksonville 577
Dong Ket 363
Princeton 354
Salerno 339
Woodbridge 337
Houston 221
Dallas 207
Dublin 123
Singapore 119
Nanjing 101
Ashburn 97
Andover 95
San Mango 94
Boardman 79
Pellezzano 70
Beijing 65
Izmir 56
Moscow 52
Hebei 48
Mestre 34
Fairfield 33
Dearborn 31
Jiaxing 29
Shenyang 28
Council Bluffs 27
Changsha 24
Nanchang 24
Rome 24
Düsseldorf 23
Munich 22
Los Angeles 21
Tianjin 18
Norwalk 15
Santa Clara 15
São Paulo 15
Fisciano 12
New York 12
Belo Horizonte 10
Brooklyn 10
Ottawa 10
San Diego 9
The Dalles 9
Guangzhou 8
Phoenix 8
Rio de Janeiro 8
Stockholm 8
Washington 8
Charlotte 7
Meppel 7
Turku 7
Chicago 6
Columbus 6
Grumo Nevano 6
Pune 6
San Francisco 6
Shanghai 6
Warsaw 6
Amsterdam 5
Avellino 5
Boston 5
Hefei 5
London 5
Napoli 5
Cambridge 4
Des Moines 4
Dronten 4
Jinan 4
Naples 4
Nuremberg 4
Seattle 4
Spinea 4
Tokyo 4
Atlanta 3
Brno 3
Curitiba 3
Fortaleza 3
Fuzhou 3
Helsinki 3
Redmond 3
Redwood City 3
Salvador 3
Sorocaba 3
Toronto 3
Wuhan 3
Abaetetuba 2
Airola 2
Araxá 2
Arzano 2
Asunción 2
Bogotá 2
Bucharest 2
Buenos Aires 2
Campos dos Goytacazes 2
Castelli Calepio 2
Chennai 2
Chiswick 2
Totale 9.548
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Nome #
A Circuital Model of Switching Behaviour of 4H-SiC p + -n-n + Diodes Valid at any Current and Temperature 801
A Measurement Method of the Injection Level Dependence of the Conductivity Mobility in Silicon 576
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs 405
A Self-Consistent Model of the OCVD Behaviour of Si and 4H-SiC P+-N-N+ Diodes 395
A Measurement method of the ideal I-V characteristics of diodes up to the built-in voltage limit 344
LIMITATIONS OF THE OPEN-CIRCUIT VOLTAGE DECAY TECHNIQUE APPLIED TO 4H-SIC DIODES 299
Analytical prediction of the cross−over point in the temperature coefficient of the forward characteristics of 4H−SiC p+−i−n diodes 213
A New Test Structure for Recombination Measurements in Thin Silicon Layers for VLSI Structures 197
Synthesis and Characterization of a New Class of Nematic Photoluminescent Oxadiazole Containing Polyethers 195
Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell 195
Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes 176
A New Method for the Measurement of the Conductivity Mobility as a Function of the Injection Level in Silicon Regions 173
Blue emitting OLED with oxadiazole/carbazole containing active layer 172
Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range 154
A Self-consistent Model of the Static and Switching Behaviour of 4H-SiC Diodes 151
A Novel Measurement Method of the Spatial Carrier Lifetime Profile Based on the OCVD Technique 148
Blue electroluminescence from films of poly(n-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 148
A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs 143
Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications 138
An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions 136
Blue Emitting OLED with oxadiazole/carbazole containing active layer 135
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode 130
An Analog Circuit for Accurate OCVD Measurements 129
Analytical description of the input capacitance of 4H-SiC DMOSFET’s in presence of oxide-semiconductor interface traps 129
Design and Performances of 4H−SiC Bipolar Mode Field Effect Transistor (BMFETs) 125
A model of the off-behaviour of 4H–SiC power JFETs 125
A Model of the ID-VGS Characteristics of Normally-Off 4H-SiC Bipolar JFETs 124
An analytical model of the potential barrier for the ID-VGS curves calculation of 4H-SiC Bipolar JFETs 122
Synthesis and luminescent properties of a new class of nematic oxadiazole containing poly-ethers for PLED 120
Synthesis and characterization of new electroluminescent molecules containing carbazole and oxadiazole units 117
Electronic Devices based on thin films and nanostructures 113
Switching device based on a thin film of an azo containing polymer for application in memory cells. 110
Al+ Implanted Anode for 4H-SiC p-i-n Diodes 110
Electrical Characterization of Very Thin Si Epitaxial Layers used for Bipolar VLSI 107
Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET 107
AZO CONTAINING POLYMER AS ACTIVE LAYERIN MEMORY CELLS PROTOTYPES 106
A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature 103
Polymer Processing in OLED Application 102
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 101
AN ANALYTICAL MODEL OF AN OCVD-BASED MEASUREMENT TECHNIQUE OFTHE LOCAL CARRIER LIFETIME 101
A Quasi-one Dimensional Analysis of Vertical JFET Device Operated in the Bipolar Mode 101
Blue electroluminescence from films of poly(N-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 96
Analytical Model of GaAs BMFET Structures 96
On the analogy of the potential barrier of trenched JFET and JBS devices 96
A new Measurement Technique for the Conductivity Mobility versus Injection Level in Silicon 95
Temperature Dependency of the Forward Characteristics of 4H-SiC DMOSFETin Presence of SiO2/SiC Interface Traps 95
Electrical Characterization of Minority Carrier Recombination Phenomena in Silicon 94
The effect of ITO surface energy on OLED electrical porperties 92
Extension of the TPA Method for the Exact Analysis of Feedback Circuits in Terms of the Return Ratio 91
Stability of amorphous silicon films and a-Si:H/c-Si heterojunctions under high energy particle irradiation 90
Efficient low temperature cSi surface passivation using aSi grown by PECVD 90
On the Crossing-Point of 4H-SiC Power Diodes Chararacteristics 90
Experimental measurements of Majority and Minority Carrier Lifetime Profile in Si- epilayers by the use of an improved OCVD method 89
Physical Model, Measurement set-up and experiments of a Measurement technique of the carrier lifetime Profile in Power devices 89
A 50W, 50MHz Conductivity Controlled Transistor 88
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 87
Analysis of a New Test Structures for Carrier-Carrier Scattering Mobilities versus Injection Level in Silicon 87
On the Electrical Behavior of V2O5/4H-SiC Schottky Diodes 87
A New Test Structure for the Evaluation of the Injection - Level Dependence of Carrier Mobilities 86
An Analytical Model for p+-n-n+ (n+-p-p+) Epitaxial Diodes Valid from Low to High Injection Levels 85
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 84
Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures 84
Test structure Design for the Evaluation of Carrier-Carrier Scattering Effect on Hole and Electron Mobilities 84
An Analysis of Thermal Behaviour of Bipolar-Mode JFET's 82
A New Test Structure for in-depth Lifetime Profiling of Thin Si Epitaxial Layers 81
Analytical Model for GaAs PIN diodes for a Wide Range of Currents and Temperatures 80
Current Gain Enhancement Effect by Gate Doping in Bipolar Mode Field Effect Transistor 79
A Two-dimensional Analytical Model of Homojunction GaAs BMFET Structures 78
Analytical Model of the Effective Recombination Velocity of Diffused p-p+ (n-n+) High-Low Junctions at Artbitrary Injection Level 78
Modeling and Characterization of the OCVD Response at an Arbitrary Time and Injection Level 77
Two-Port Analysis of Feedback Circuits in Terms of the Return Ratio 77
Experimental Characterization of the Effective Recombination Velocity at the High-Low Transition of BSF Silicon Solar Cells 77
An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current 76
Modelling and characterisation of the input I-V curves of the Bipolar Jfet structures showing a negative Resistance behaviour 75
Investigation of 4H-SiC Bipolar Mode Field Effect Transistor (BMFET) as High Power Transistor 75
Characterization of Very Thin Epitaxial Layers 73
Recombination Lifetime Profiling in Very Thin Silicon Epitaxial Layers used for Bipolar VLSI 71
Power Handling Capabilities of a New Device: the Conductivity Controlled Transistor 71
Experimental Analysis of the Temperature Dependence of the S.H.R. Lifetime and of the Apparent Bandgap Narrowing in n-type Silicon 69
Electrical Characterization of Polysilicon/Monosilicon Interfaces 68
Recombination Measurement of n-type Heavily Doped Layer in High-Low Silicon Junctions 67
Numerical simulations of a 4H-SiC BMFET power transistors with normally-off characteristics 67
Performance analysis of a normally-off 4H-SiC trench bipolar-mode FET for power applications 67
Dispositivi per la conversione termofotovoltaica 66
Experimental Detection of Module Failure in Large Photovoltaic Arrays: Application to the Delphos Photovoltaic Plant 65
On the Saturation Voltage of Bipolar Mode Vertical Jfet's 65
Modello Analitico dei diodi P+-N-N+ alle Medie Correnti 64
Measurement of the Effective Recombination Velocity of Semiconductor High-Low Transitions 63
Drain Current Optimization for a Very High Voltage Fast Switch Device with Bipolar Mode Jfet Structure 63
Electrical Characterization of minority carrier transport parameters in n-type heavily doped silicon 62
Electrical Characterization of Minority Carrier Recombination at the Polysilicon/Silicon Interface 61
Realization of a Normally-off Power Biopolar Mode JFET's 61
Comments on Direct Experimental Determination of Voltage Across High-Low Junctions 60
Electrical Characteristics of the Conductivity Controlled Transistor as a Power Device Structure 59
On-State Modeling of Power JFET Structures in the Bipolar Mode 58
Detection of Recombination Centers in Epitaxial Layers by Temperature Scanning and Depth Lifetime Profiling 56
Electrical Measurement of Electron and Hole Mobilities as a Function of Injection Level in Silicon 55
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by means of a Special Test Structure 52
High-Voltage Bipolar Model JFET with normally-off Characteristics 49
Totale 11.998
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Categoria #
all - tutte 32.161
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 32.161
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021881 0 0 96 0 105 12 99 0 94 0 101 374
2021/2022692 0 0 4 2 18 22 9 19 100 92 136 290
2022/20231.285 117 93 22 159 159 269 25 165 196 1 50 29
2023/2024303 44 66 18 10 18 26 8 9 0 14 24 66
2024/20251.042 55 20 18 53 44 130 202 154 115 31 146 74
2025/20263.368 307 1.654 1.407 0 0 0 0 0 0 0 0 0
Totale 11.998