UniSa - IRIS Institutional Research Information System

BELLONE, Salvatore
 Distribuzione geografica
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Continente #
NA - Nord America 6.471
AS - Asia 5.302
EU - Europa 2.511
SA - Sud America 310
Continente sconosciuto - Info sul continente non disponibili 193
AF - Africa 38
OC - Oceania 4
Totale 14.829
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Nazione #
US - Stati Uniti d'America 6.398
HK - Hong Kong 2.934
IT - Italia 1.096
SG - Singapore 926
CN - Cina 598
VN - Vietnam 499
UA - Ucraina 479
BR - Brasile 239
DE - Germania 185
RU - Federazione Russa 183
IE - Irlanda 129
FI - Finlandia 128
FR - Francia 103
KR - Corea 77
TR - Turchia 71
SE - Svezia 64
IN - India 52
GB - Regno Unito 43
NL - Olanda 37
AR - Argentina 28
CA - Canada 27
MX - Messico 25
BD - Bangladesh 24
JP - Giappone 21
IQ - Iraq 18
ZA - Sudafrica 15
ES - Italia 12
PK - Pakistan 12
PL - Polonia 12
CO - Colombia 11
EC - Ecuador 11
IL - Israele 10
LT - Lituania 10
SA - Arabia Saudita 8
MY - Malesia 7
UZ - Uzbekistan 7
AT - Austria 6
PH - Filippine 6
TN - Tunisia 6
VE - Venezuela 6
AE - Emirati Arabi Uniti 5
CH - Svizzera 5
ID - Indonesia 5
MA - Marocco 5
PA - Panama 5
PY - Paraguay 5
CL - Cile 4
CZ - Repubblica Ceca 4
EU - Europa 4
RO - Romania 4
CR - Costa Rica 3
DO - Repubblica Dominicana 3
ET - Etiopia 3
JO - Giordania 3
NP - Nepal 3
OM - Oman 3
UY - Uruguay 3
AL - Albania 2
AU - Australia 2
DZ - Algeria 2
HN - Honduras 2
LA - Repubblica Popolare Democratica del Laos 2
ME - Montenegro 2
SV - El Salvador 2
SY - Repubblica araba siriana 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
AD - Andorra 1
AO - Angola 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BN - Brunei Darussalam 1
BO - Bolivia 1
BQ - ???statistics.table.value.countryCode.BQ??? 1
BS - Bahamas 1
CM - Camerun 1
CU - Cuba 1
HU - Ungheria 1
IR - Iran 1
JM - Giamaica 1
KE - Kenya 1
KG - Kirghizistan 1
KH - Cambogia 1
LU - Lussemburgo 1
LV - Lettonia 1
LY - Libia 1
MZ - Mozambico 1
NA - Namibia 1
NC - Nuova Caledonia 1
PE - Perù 1
PG - Papua Nuova Guinea 1
PT - Portogallo 1
RS - Serbia 1
SN - Senegal 1
SR - Suriname 1
TW - Taiwan 1
XK - ???statistics.table.value.countryCode.XK??? 1
YE - Yemen 1
Totale 14.642
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Città #
Hong Kong 2.933
Ann Arbor 1.296
Wilmington 649
Chandler 624
Jacksonville 577
Singapore 454
San Jose 426
Dong Ket 363
Princeton 354
Salerno 339
Woodbridge 337
Milan 295
Dallas 237
Houston 228
Ashburn 209
Council Bluffs 128
Dublin 127
Beijing 111
Nanjing 101
Andover 95
San Mango 94
Lauterbourg 88
The Dalles 87
Boardman 79
Pellezzano 70
Rome 70
Izmir 57
Moscow 53
Hebei 48
Ho Chi Minh City 47
Santa Clara 36
Mestre 34
Fairfield 33
Dearborn 31
Los Angeles 31
Figino 30
Hanoi 30
Jiaxing 29
New York 29
Shenyang 28
Changsha 25
São Paulo 25
Nanchang 24
Düsseldorf 23
Munich 22
Tianjin 18
Brooklyn 17
Turku 17
Chicago 16
Tokyo 16
Norwalk 15
Chennai 14
Shanghai 14
Fisciano 13
Helsinki 13
Orem 13
Phoenix 12
Stockholm 12
San Diego 11
Warsaw 11
Belo Horizonte 10
Frankfurt am Main 10
Ottawa 10
Rio de Janeiro 10
Atlanta 9
Da Nang 9
Johannesburg 9
Manchester 9
Boston 8
Charlotte 8
Guangzhou 8
Haiphong 8
Mexico City 8
Mumbai 8
Washington 8
Baghdad 7
Columbus 7
Denver 7
London 7
Meppel 7
Poplar 7
Tashkent 7
Turin 7
Amsterdam 6
Grumo Nevano 6
Lahore 6
Naples 6
Pune 6
San Francisco 6
Toronto 6
Avellino 5
Des Moines 5
Hefei 5
Montreal 5
Napoli 5
New Delhi 5
Panama City 5
Quito 5
Asunción 4
Brno 4
Totale 11.496
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Nome #
A Circuital Model of Switching Behaviour of 4H-SiC p + -n-n + Diodes Valid at any Current and Temperature 849
A Measurement Method of the Injection Level Dependence of the Conductivity Mobility in Silicon 606
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs 446
A Self-Consistent Model of the OCVD Behaviour of Si and 4H-SiC P+-N-N+ Diodes 436
A Measurement method of the ideal I-V characteristics of diodes up to the built-in voltage limit 387
LIMITATIONS OF THE OPEN-CIRCUIT VOLTAGE DECAY TECHNIQUE APPLIED TO 4H-SIC DIODES 331
Analytical prediction of the cross−over point in the temperature coefficient of the forward characteristics of 4H−SiC p+−i−n diodes 236
A New Test Structure for Recombination Measurements in Thin Silicon Layers for VLSI Structures 226
Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell 224
Synthesis and Characterization of a New Class of Nematic Photoluminescent Oxadiazole Containing Polyethers 222
A New Method for the Measurement of the Conductivity Mobility as a Function of the Injection Level in Silicon Regions 213
Blue emitting OLED with oxadiazole/carbazole containing active layer 209
Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range 196
Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes 195
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode 195
Blue electroluminescence from films of poly(n-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 193
A Novel Measurement Method of the Spatial Carrier Lifetime Profile Based on the OCVD Technique 191
A Self-consistent Model of the Static and Switching Behaviour of 4H-SiC Diodes 190
A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs 186
Blue Emitting OLED with oxadiazole/carbazole containing active layer 184
Synthesis and characterization of new electroluminescent molecules containing carbazole and oxadiazole units 175
A model of the off-behaviour of 4H–SiC power JFETs 173
An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions 169
Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications 169
A Model of the ID-VGS Characteristics of Normally-Off 4H-SiC Bipolar JFETs 168
Analytical description of the input capacitance of 4H-SiC DMOSFET’s in presence of oxide-semiconductor interface traps 165
Electronic Devices based on thin films and nanostructures 158
An analytical model of the potential barrier for the ID-VGS curves calculation of 4H-SiC Bipolar JFETs 152
Switching device based on a thin film of an azo containing polymer for application in memory cells. 150
A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature 150
Synthesis and luminescent properties of a new class of nematic oxadiazole containing poly-ethers for PLED 148
An Analog Circuit for Accurate OCVD Measurements 145
Design and Performances of 4H−SiC Bipolar Mode Field Effect Transistor (BMFETs) 145
AZO CONTAINING POLYMER AS ACTIVE LAYERIN MEMORY CELLS PROTOTYPES 140
Blue electroluminescence from films of poly(N-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 138
A Quasi-one Dimensional Analysis of Vertical JFET Device Operated in the Bipolar Mode 137
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 136
Al+ Implanted Anode for 4H-SiC p-i-n Diodes 136
A new Measurement Technique for the Conductivity Mobility versus Injection Level in Silicon 134
Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET 134
Polymer Processing in OLED Application 130
Electrical Characterization of Very Thin Si Epitaxial Layers used for Bipolar VLSI 128
Temperature Dependency of the Forward Characteristics of 4H-SiC DMOSFETin Presence of SiO2/SiC Interface Traps 128
On the analogy of the potential barrier of trenched JFET and JBS devices 128
AN ANALYTICAL MODEL OF AN OCVD-BASED MEASUREMENT TECHNIQUE OFTHE LOCAL CARRIER LIFETIME 125
A New Test Structure for the Evaluation of the Injection - Level Dependence of Carrier Mobilities 122
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 119
A 50W, 50MHz Conductivity Controlled Transistor 119
Stability of amorphous silicon films and a-Si:H/c-Si heterojunctions under high energy particle irradiation 118
Analytical Model of GaAs BMFET Structures 118
Electrical Characterization of Minority Carrier Recombination Phenomena in Silicon 117
On the Crossing-Point of 4H-SiC Power Diodes Chararacteristics 116
Physical Model, Measurement set-up and experiments of a Measurement technique of the carrier lifetime Profile in Power devices 115
Efficient low temperature cSi surface passivation using aSi grown by PECVD 115
Extension of the TPA Method for the Exact Analysis of Feedback Circuits in Terms of the Return Ratio 115
A New Test Structure for in-depth Lifetime Profiling of Thin Si Epitaxial Layers 115
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 113
Experimental measurements of Majority and Minority Carrier Lifetime Profile in Si- epilayers by the use of an improved OCVD method 113
Analysis of a New Test Structures for Carrier-Carrier Scattering Mobilities versus Injection Level in Silicon 113
The effect of ITO surface energy on OLED electrical porperties 113
An Analytical Model for p+-n-n+ (n+-p-p+) Epitaxial Diodes Valid from Low to High Injection Levels 111
On the Electrical Behavior of V2O5/4H-SiC Schottky Diodes 111
Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures 110
Test structure Design for the Evaluation of Carrier-Carrier Scattering Effect on Hole and Electron Mobilities 110
Experimental Characterization of the Effective Recombination Velocity at the High-Low Transition of BSF Silicon Solar Cells 107
An Analysis of Thermal Behaviour of Bipolar-Mode JFET's 104
Two-Port Analysis of Feedback Circuits in Terms of the Return Ratio 104
Current Gain Enhancement Effect by Gate Doping in Bipolar Mode Field Effect Transistor 103
Investigation of 4H-SiC Bipolar Mode Field Effect Transistor (BMFET) as High Power Transistor 103
Performance analysis of a normally-off 4H-SiC trench bipolar-mode FET for power applications 99
Analytical Model for GaAs PIN diodes for a Wide Range of Currents and Temperatures 98
Modelling and characterisation of the input I-V curves of the Bipolar Jfet structures showing a negative Resistance behaviour 97
Modeling and Characterization of the OCVD Response at an Arbitrary Time and Injection Level 97
An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current 97
A Two-dimensional Analytical Model of Homojunction GaAs BMFET Structures 96
Dispositivi per la conversione termofotovoltaica 96
Power Handling Capabilities of a New Device: the Conductivity Controlled Transistor 96
Experimental Detection of Module Failure in Large Photovoltaic Arrays: Application to the Delphos Photovoltaic Plant 91
Recombination Lifetime Profiling in Very Thin Silicon Epitaxial Layers used for Bipolar VLSI 90
Characterization of Very Thin Epitaxial Layers 90
Analytical Model of the Effective Recombination Velocity of Diffused p-p+ (n-n+) High-Low Junctions at Artbitrary Injection Level 89
Electrical Characterization of Polysilicon/Monosilicon Interfaces 89
Measurement of the Effective Recombination Velocity of Semiconductor High-Low Transitions 86
Experimental Analysis of the Temperature Dependence of the S.H.R. Lifetime and of the Apparent Bandgap Narrowing in n-type Silicon 86
Modello Analitico dei diodi P+-N-N+ alle Medie Correnti 85
On the Saturation Voltage of Bipolar Mode Vertical Jfet's 85
Drain Current Optimization for a Very High Voltage Fast Switch Device with Bipolar Mode Jfet Structure 84
Recombination Measurement of n-type Heavily Doped Layer in High-Low Silicon Junctions 83
Numerical simulations of a 4H-SiC BMFET power transistors with normally-off characteristics 83
Electrical Characterization of Minority Carrier Recombination at the Polysilicon/Silicon Interface 81
Realization of a Normally-off Power Biopolar Mode JFET's 80
Electrical Characterization of minority carrier transport parameters in n-type heavily doped silicon 78
On-State Modeling of Power JFET Structures in the Bipolar Mode 75
Comments on Direct Experimental Determination of Voltage Across High-Low Junctions 74
Electrical Characteristics of the Conductivity Controlled Transistor as a Power Device Structure 74
Detection of Recombination Centers in Epitaxial Layers by Temperature Scanning and Depth Lifetime Profiling 72
Electrical Measurement of Electron and Hole Mobilities as a Function of Injection Level in Silicon 71
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by means of a Special Test Structure 65
High-Voltage Bipolar Model JFET with normally-off Characteristics 62
Totale 14.829
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Categoria #
all - tutte 40.080
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 40.080
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022692 0 0 4 2 18 22 9 19 100 92 136 290
2022/20231.285 117 93 22 159 159 269 25 165 196 1 50 29
2023/2024303 44 66 18 10 18 26 8 9 0 14 24 66
2024/20251.042 55 20 18 53 44 130 202 154 115 31 146 74
2025/20266.080 307 1.654 1.436 176 401 249 617 131 183 396 97 433
2026/2027119 119 0 0 0 0 0 0 0 0 0 0 0
Totale 14.829