UniSa - IRIS Institutional Research Information System

BELLONE, Salvatore
 Distribuzione geografica
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Continente #
NA - Nord America 5.634
AS - Asia 4.737
EU - Europa 1.960
SA - Sud America 246
AF - Africa 19
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 4
Totale 12.605
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Nazione #
US - Stati Uniti d'America 5.593
HK - Hong Kong 2.902
SG - Singapore 706
IT - Italia 685
CN - Cina 527
UA - Ucraina 477
VN - Vietnam 394
BR - Brasile 210
RU - Federazione Russa 180
DE - Germania 175
IE - Irlanda 125
FI - Finlandia 121
KR - Corea 65
SE - Svezia 64
TR - Turchia 63
GB - Regno Unito 35
NL - Olanda 34
IN - India 24
CA - Canada 22
AR - Argentina 17
JP - Giappone 15
MX - Messico 12
ES - Italia 11
ZA - Sudafrica 11
LT - Lituania 10
PL - Polonia 10
BD - Bangladesh 9
EC - Ecuador 7
FR - Francia 7
AT - Austria 6
CH - Svizzera 5
CO - Colombia 5
IL - Israele 5
CZ - Repubblica Ceca 4
EU - Europa 4
IQ - Iraq 4
AE - Emirati Arabi Uniti 3
MA - Marocco 3
RO - Romania 3
AU - Australia 2
CL - Cile 2
DO - Repubblica Dominicana 2
LA - Repubblica Popolare Democratica del Laos 2
MY - Malesia 2
OM - Oman 2
PK - Pakistan 2
PY - Paraguay 2
AD - Andorra 1
AL - Albania 1
AO - Angola 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BN - Brunei Darussalam 1
BO - Bolivia 1
CR - Costa Rica 1
CU - Cuba 1
DZ - Algeria 1
ID - Indonesia 1
IR - Iran 1
JM - Giamaica 1
JO - Giordania 1
KE - Kenya 1
KG - Kirghizistan 1
KH - Cambogia 1
LU - Lussemburgo 1
LV - Lettonia 1
ME - Montenegro 1
NC - Nuova Caledonia 1
PA - Panama 1
PE - Perù 1
PG - Papua Nuova Guinea 1
PH - Filippine 1
PT - Portogallo 1
RS - Serbia 1
SA - Arabia Saudita 1
SN - Senegal 1
TN - Tunisia 1
TW - Taiwan 1
UY - Uruguay 1
UZ - Uzbekistan 1
XK - ???statistics.table.value.countryCode.XK??? 1
YE - Yemen 1
Totale 12.605
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Città #
Hong Kong 2.902
Ann Arbor 1.296
Wilmington 648
Chandler 624
Jacksonville 577
Dong Ket 363
Princeton 354
Salerno 339
Woodbridge 337
Singapore 322
Dallas 233
Houston 226
Ashburn 142
Dublin 123
Nanjing 101
Andover 95
San Mango 94
Beijing 85
Boardman 79
Pellezzano 70
Izmir 56
Moscow 53
Hebei 48
The Dalles 36
Mestre 34
Fairfield 33
Dearborn 31
Jiaxing 29
Los Angeles 29
Shenyang 28
Council Bluffs 27
Rome 26
Changsha 25
New York 25
Nanchang 24
Düsseldorf 23
Munich 22
São Paulo 22
Tianjin 18
Turku 17
Brooklyn 15
Norwalk 15
Santa Clara 15
Fisciano 12
Stockholm 12
Chennai 11
Phoenix 11
Belo Horizonte 10
Chicago 10
Ho Chi Minh City 10
Ottawa 10
Shanghai 10
Tokyo 10
Atlanta 9
San Diego 9
San Jose 9
Warsaw 9
Boston 8
Guangzhou 8
Johannesburg 8
Rio de Janeiro 8
Washington 8
Charlotte 7
Denver 7
London 7
Manchester 7
Meppel 7
Poplar 7
Columbus 6
Grumo Nevano 6
Helsinki 6
Pune 6
San Francisco 6
Amsterdam 5
Avellino 5
Des Moines 5
Hanoi 5
Hefei 5
Napoli 5
Orem 5
Toronto 5
Brno 4
Cambridge 4
Dronten 4
Fortaleza 4
Frankfurt am Main 4
Jinan 4
Montreal 4
Mumbai 4
Naples 4
Nuremberg 4
Seattle 4
Spinea 4
Ankara 3
Curitiba 3
Fuzhou 3
Guayaquil 3
Laboulaye 3
Paris 3
Redmond 3
Totale 10.024
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Nome #
A Circuital Model of Switching Behaviour of 4H-SiC p + -n-n + Diodes Valid at any Current and Temperature 815
A Measurement Method of the Injection Level Dependence of the Conductivity Mobility in Silicon 592
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs 423
A Self-Consistent Model of the OCVD Behaviour of Si and 4H-SiC P+-N-N+ Diodes 412
A Measurement method of the ideal I-V characteristics of diodes up to the built-in voltage limit 361
LIMITATIONS OF THE OPEN-CIRCUIT VOLTAGE DECAY TECHNIQUE APPLIED TO 4H-SIC DIODES 308
Analytical prediction of the cross−over point in the temperature coefficient of the forward characteristics of 4H−SiC p+−i−n diodes 219
A New Test Structure for Recombination Measurements in Thin Silicon Layers for VLSI Structures 211
Synthesis and Characterization of a New Class of Nematic Photoluminescent Oxadiazole Containing Polyethers 203
Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell 200
A New Method for the Measurement of the Conductivity Mobility as a Function of the Injection Level in Silicon Regions 188
Blue emitting OLED with oxadiazole/carbazole containing active layer 186
Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes 180
A Novel Measurement Method of the Spatial Carrier Lifetime Profile Based on the OCVD Technique 169
Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range 168
A Self-consistent Model of the Static and Switching Behaviour of 4H-SiC Diodes 166
Blue electroluminescence from films of poly(n-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 162
Blue Emitting OLED with oxadiazole/carbazole containing active layer 160
A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs 155
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode 155
Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications 146
An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions 142
A Model of the ID-VGS Characteristics of Normally-Off 4H-SiC Bipolar JFETs 141
Analytical description of the input capacitance of 4H-SiC DMOSFET’s in presence of oxide-semiconductor interface traps 140
A model of the off-behaviour of 4H–SiC power JFETs 138
An Analog Circuit for Accurate OCVD Measurements 134
Synthesis and characterization of new electroluminescent molecules containing carbazole and oxadiazole units 132
Design and Performances of 4H−SiC Bipolar Mode Field Effect Transistor (BMFETs) 129
Synthesis and luminescent properties of a new class of nematic oxadiazole containing poly-ethers for PLED 127
An analytical model of the potential barrier for the ID-VGS curves calculation of 4H-SiC Bipolar JFETs 127
Electronic Devices based on thin films and nanostructures 125
AZO CONTAINING POLYMER AS ACTIVE LAYERIN MEMORY CELLS PROTOTYPES 123
A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature 122
A Quasi-one Dimensional Analysis of Vertical JFET Device Operated in the Bipolar Mode 118
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 117
Blue electroluminescence from films of poly(N-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 117
Switching device based on a thin film of an azo containing polymer for application in memory cells. 117
Al+ Implanted Anode for 4H-SiC p-i-n Diodes 116
Electrical Characterization of Very Thin Si Epitaxial Layers used for Bipolar VLSI 111
A new Measurement Technique for the Conductivity Mobility versus Injection Level in Silicon 110
Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET 110
Polymer Processing in OLED Application 108
AN ANALYTICAL MODEL OF AN OCVD-BASED MEASUREMENT TECHNIQUE OFTHE LOCAL CARRIER LIFETIME 107
A 50W, 50MHz Conductivity Controlled Transistor 104
Temperature Dependency of the Forward Characteristics of 4H-SiC DMOSFETin Presence of SiO2/SiC Interface Traps 104
Electrical Characterization of Minority Carrier Recombination Phenomena in Silicon 101
On the analogy of the potential barrier of trenched JFET and JBS devices 101
A New Test Structure for in-depth Lifetime Profiling of Thin Si Epitaxial Layers 98
Analytical Model of GaAs BMFET Structures 98
The effect of ITO surface energy on OLED electrical porperties 97
Stability of amorphous silicon films and a-Si:H/c-Si heterojunctions under high energy particle irradiation 96
Extension of the TPA Method for the Exact Analysis of Feedback Circuits in Terms of the Return Ratio 96
A New Test Structure for the Evaluation of the Injection - Level Dependence of Carrier Mobilities 96
On the Crossing-Point of 4H-SiC Power Diodes Chararacteristics 96
Physical Model, Measurement set-up and experiments of a Measurement technique of the carrier lifetime Profile in Power devices 95
Experimental measurements of Majority and Minority Carrier Lifetime Profile in Si- epilayers by the use of an improved OCVD method 94
On the Electrical Behavior of V2O5/4H-SiC Schottky Diodes 94
Efficient low temperature cSi surface passivation using aSi grown by PECVD 93
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 92
Analysis of a New Test Structures for Carrier-Carrier Scattering Mobilities versus Injection Level in Silicon 92
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 91
An Analytical Model for p+-n-n+ (n+-p-p+) Epitaxial Diodes Valid from Low to High Injection Levels 90
Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures 87
Test structure Design for the Evaluation of Carrier-Carrier Scattering Effect on Hole and Electron Mobilities 87
Two-Port Analysis of Feedback Circuits in Terms of the Return Ratio 85
An Analysis of Thermal Behaviour of Bipolar-Mode JFET's 84
A Two-dimensional Analytical Model of Homojunction GaAs BMFET Structures 82
Experimental Characterization of the Effective Recombination Velocity at the High-Low Transition of BSF Silicon Solar Cells 82
Modeling and Characterization of the OCVD Response at an Arbitrary Time and Injection Level 81
Analytical Model for GaAs PIN diodes for a Wide Range of Currents and Temperatures 81
Current Gain Enhancement Effect by Gate Doping in Bipolar Mode Field Effect Transistor 81
Modelling and characterisation of the input I-V curves of the Bipolar Jfet structures showing a negative Resistance behaviour 80
Analytical Model of the Effective Recombination Velocity of Diffused p-p+ (n-n+) High-Low Junctions at Artbitrary Injection Level 80
An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current 79
Investigation of 4H-SiC Bipolar Mode Field Effect Transistor (BMFET) as High Power Transistor 79
Power Handling Capabilities of a New Device: the Conductivity Controlled Transistor 77
Characterization of Very Thin Epitaxial Layers 76
Performance analysis of a normally-off 4H-SiC trench bipolar-mode FET for power applications 76
Recombination Lifetime Profiling in Very Thin Silicon Epitaxial Layers used for Bipolar VLSI 74
Measurement of the Effective Recombination Velocity of Semiconductor High-Low Transitions 72
Numerical simulations of a 4H-SiC BMFET power transistors with normally-off characteristics 72
Electrical Characterization of Polysilicon/Monosilicon Interfaces 72
Experimental Analysis of the Temperature Dependence of the S.H.R. Lifetime and of the Apparent Bandgap Narrowing in n-type Silicon 71
Experimental Detection of Module Failure in Large Photovoltaic Arrays: Application to the Delphos Photovoltaic Plant 71
Modello Analitico dei diodi P+-N-N+ alle Medie Correnti 70
On the Saturation Voltage of Bipolar Mode Vertical Jfet's 70
Dispositivi per la conversione termofotovoltaica 70
Recombination Measurement of n-type Heavily Doped Layer in High-Low Silicon Junctions 69
Electrical Characterization of Minority Carrier Recombination at the Polysilicon/Silicon Interface 68
Drain Current Optimization for a Very High Voltage Fast Switch Device with Bipolar Mode Jfet Structure 66
Electrical Characterization of minority carrier transport parameters in n-type heavily doped silicon 64
Realization of a Normally-off Power Biopolar Mode JFET's 63
Comments on Direct Experimental Determination of Voltage Across High-Low Junctions 62
On-State Modeling of Power JFET Structures in the Bipolar Mode 61
Electrical Characteristics of the Conductivity Controlled Transistor as a Power Device Structure 60
Detection of Recombination Centers in Epitaxial Layers by Temperature Scanning and Depth Lifetime Profiling 60
Electrical Measurement of Electron and Hole Mobilities as a Function of Injection Level in Silicon 56
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by means of a Special Test Structure 54
High-Voltage Bipolar Model JFET with normally-off Characteristics 52
Totale 12.792
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Categoria #
all - tutte 35.533
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 35.533
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021680 0 0 0 0 0 12 99 0 94 0 101 374
2021/2022692 0 0 4 2 18 22 9 19 100 92 136 290
2022/20231.285 117 93 22 159 159 269 25 165 196 1 50 29
2023/2024303 44 66 18 10 18 26 8 9 0 14 24 66
2024/20251.042 55 20 18 53 44 130 202 154 115 31 146 74
2025/20264.162 307 1.654 1.436 176 401 188 0 0 0 0 0 0
Totale 12.792