UniSa - IRIS Institutional Research Information System

BELLONE, Salvatore
 Distribuzione geografica
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Continente #
NA - Nord America 6.381
AS - Asia 5.256
EU - Europa 2.103
SA - Sud America 304
AF - Africa 38
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 4
Totale 14.091
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Nazione #
US - Stati Uniti d'America 6.321
HK - Hong Kong 2.921
SG - Singapore 918
IT - Italia 690
CN - Cina 578
VN - Vietnam 499
UA - Ucraina 479
BR - Brasile 237
DE - Germania 185
RU - Federazione Russa 183
IE - Irlanda 129
FI - Finlandia 128
FR - Francia 103
KR - Corea 77
TR - Turchia 71
SE - Svezia 64
IN - India 52
GB - Regno Unito 43
NL - Olanda 36
AR - Argentina 26
BD - Bangladesh 23
CA - Canada 23
JP - Giappone 21
MX - Messico 19
IQ - Iraq 18
ZA - Sudafrica 15
ES - Italia 12
PK - Pakistan 12
PL - Polonia 12
CO - Colombia 11
EC - Ecuador 11
LT - Lituania 10
SA - Arabia Saudita 8
MY - Malesia 7
UZ - Uzbekistan 7
AT - Austria 6
IL - Israele 6
PH - Filippine 6
TN - Tunisia 6
VE - Venezuela 6
AE - Emirati Arabi Uniti 5
CH - Svizzera 5
ID - Indonesia 5
MA - Marocco 5
PA - Panama 5
CL - Cile 4
CZ - Repubblica Ceca 4
EU - Europa 4
PY - Paraguay 4
DO - Repubblica Dominicana 3
ET - Etiopia 3
JO - Giordania 3
NP - Nepal 3
OM - Oman 3
RO - Romania 3
AL - Albania 2
AU - Australia 2
CR - Costa Rica 2
DZ - Algeria 2
HN - Honduras 2
LA - Repubblica Popolare Democratica del Laos 2
ME - Montenegro 2
SV - El Salvador 2
SY - Repubblica araba siriana 2
TH - Thailandia 2
UY - Uruguay 2
AD - Andorra 1
AO - Angola 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BN - Brunei Darussalam 1
BO - Bolivia 1
BS - Bahamas 1
CM - Camerun 1
CU - Cuba 1
HU - Ungheria 1
IR - Iran 1
JM - Giamaica 1
KE - Kenya 1
KG - Kirghizistan 1
KH - Cambogia 1
LU - Lussemburgo 1
LV - Lettonia 1
LY - Libia 1
MZ - Mozambico 1
NA - Namibia 1
NC - Nuova Caledonia 1
PE - Perù 1
PG - Papua Nuova Guinea 1
PT - Portogallo 1
RS - Serbia 1
SN - Senegal 1
SR - Suriname 1
TW - Taiwan 1
XK - ???statistics.table.value.countryCode.XK??? 1
YE - Yemen 1
Totale 14.091
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Città #
Hong Kong 2.920
Ann Arbor 1.296
Wilmington 648
Chandler 624
Jacksonville 577
Singapore 448
San Jose 426
Dong Ket 363
Princeton 354
Salerno 339
Woodbridge 337
Dallas 236
Houston 227
Ashburn 207
Council Bluffs 128
Dublin 127
Nanjing 101
Andover 95
San Mango 94
Beijing 93
Lauterbourg 88
The Dalles 87
Boardman 79
Pellezzano 70
Izmir 57
Moscow 53
Hebei 48
Ho Chi Minh City 47
Mestre 34
Fairfield 33
Dearborn 31
Los Angeles 31
Hanoi 30
Jiaxing 29
New York 28
Shenyang 28
Rome 26
Changsha 25
São Paulo 25
Nanchang 24
Düsseldorf 23
Munich 22
Santa Clara 20
Tianjin 18
Turku 17
Tokyo 16
Brooklyn 15
Norwalk 15
Chennai 14
Fisciano 13
Helsinki 13
Orem 13
Shanghai 13
Chicago 12
Stockholm 12
Phoenix 11
Belo Horizonte 10
Frankfurt am Main 10
Ottawa 10
Rio de Janeiro 10
San Diego 10
Warsaw 10
Atlanta 9
Da Nang 9
Johannesburg 9
Manchester 9
Boston 8
Guangzhou 8
Haiphong 8
Mumbai 8
Washington 8
Baghdad 7
Charlotte 7
Denver 7
London 7
Meppel 7
Poplar 7
Tashkent 7
Amsterdam 6
Columbus 6
Grumo Nevano 6
Lahore 6
Pune 6
San Francisco 6
Toronto 6
Avellino 5
Des Moines 5
Hefei 5
Napoli 5
New Delhi 5
Panama City 5
Quito 5
Brno 4
Buenos Aires 4
Cambridge 4
Can Tho 4
Dronten 4
Fortaleza 4
Jeddah 4
Jinan 4
Totale 11.054
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Nome #
A Circuital Model of Switching Behaviour of 4H-SiC p + -n-n + Diodes Valid at any Current and Temperature 838
A Measurement Method of the Injection Level Dependence of the Conductivity Mobility in Silicon 603
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs 445
A Self-Consistent Model of the OCVD Behaviour of Si and 4H-SiC P+-N-N+ Diodes 428
A Measurement method of the ideal I-V characteristics of diodes up to the built-in voltage limit 379
LIMITATIONS OF THE OPEN-CIRCUIT VOLTAGE DECAY TECHNIQUE APPLIED TO 4H-SIC DIODES 321
Analytical prediction of the cross−over point in the temperature coefficient of the forward characteristics of 4H−SiC p+−i−n diodes 230
A New Test Structure for Recombination Measurements in Thin Silicon Layers for VLSI Structures 225
Synthesis and Characterization of a New Class of Nematic Photoluminescent Oxadiazole Containing Polyethers 215
Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell 213
A New Method for the Measurement of the Conductivity Mobility as a Function of the Injection Level in Silicon Regions 206
Blue emitting OLED with oxadiazole/carbazole containing active layer 201
Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes 193
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode 192
Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range 192
A Novel Measurement Method of the Spatial Carrier Lifetime Profile Based on the OCVD Technique 189
Blue electroluminescence from films of poly(n-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 188
Blue Emitting OLED with oxadiazole/carbazole containing active layer 182
A Self-consistent Model of the Static and Switching Behaviour of 4H-SiC Diodes 181
A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs 177
A model of the off-behaviour of 4H–SiC power JFETs 163
A Model of the ID-VGS Characteristics of Normally-Off 4H-SiC Bipolar JFETs 161
Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications 161
Synthesis and characterization of new electroluminescent molecules containing carbazole and oxadiazole units 160
An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions 158
Analytical description of the input capacitance of 4H-SiC DMOSFET’s in presence of oxide-semiconductor interface traps 157
An Analog Circuit for Accurate OCVD Measurements 144
Electronic Devices based on thin films and nanostructures 143
A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature 143
An analytical model of the potential barrier for the ID-VGS curves calculation of 4H-SiC Bipolar JFETs 142
Design and Performances of 4H−SiC Bipolar Mode Field Effect Transistor (BMFETs) 142
Synthesis and luminescent properties of a new class of nematic oxadiazole containing poly-ethers for PLED 141
AZO CONTAINING POLYMER AS ACTIVE LAYERIN MEMORY CELLS PROTOTYPES 138
Switching device based on a thin film of an azo containing polymer for application in memory cells. 136
A Quasi-one Dimensional Analysis of Vertical JFET Device Operated in the Bipolar Mode 136
Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET 132
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 131
Blue electroluminescence from films of poly(N-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 131
Polymer Processing in OLED Application 128
Al+ Implanted Anode for 4H-SiC p-i-n Diodes 126
A new Measurement Technique for the Conductivity Mobility versus Injection Level in Silicon 124
Electrical Characterization of Very Thin Si Epitaxial Layers used for Bipolar VLSI 122
On the analogy of the potential barrier of trenched JFET and JBS devices 122
AN ANALYTICAL MODEL OF AN OCVD-BASED MEASUREMENT TECHNIQUE OFTHE LOCAL CARRIER LIFETIME 118
Temperature Dependency of the Forward Characteristics of 4H-SiC DMOSFETin Presence of SiO2/SiC Interface Traps 117
Electrical Characterization of Minority Carrier Recombination Phenomena in Silicon 116
The effect of ITO surface energy on OLED electrical porperties 112
Extension of the TPA Method for the Exact Analysis of Feedback Circuits in Terms of the Return Ratio 112
A New Test Structure for in-depth Lifetime Profiling of Thin Si Epitaxial Layers 112
A 50W, 50MHz Conductivity Controlled Transistor 112
On the Crossing-Point of 4H-SiC Power Diodes Chararacteristics 112
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 111
Stability of amorphous silicon films and a-Si:H/c-Si heterojunctions under high energy particle irradiation 111
Physical Model, Measurement set-up and experiments of a Measurement technique of the carrier lifetime Profile in Power devices 109
Efficient low temperature cSi surface passivation using aSi grown by PECVD 109
A New Test Structure for the Evaluation of the Injection - Level Dependence of Carrier Mobilities 108
Analytical Model of GaAs BMFET Structures 108
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 107
Analysis of a New Test Structures for Carrier-Carrier Scattering Mobilities versus Injection Level in Silicon 107
Experimental measurements of Majority and Minority Carrier Lifetime Profile in Si- epilayers by the use of an improved OCVD method 105
An Analytical Model for p+-n-n+ (n+-p-p+) Epitaxial Diodes Valid from Low to High Injection Levels 105
Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures 103
On the Electrical Behavior of V2O5/4H-SiC Schottky Diodes 103
Test structure Design for the Evaluation of Carrier-Carrier Scattering Effect on Hole and Electron Mobilities 101
Two-Port Analysis of Feedback Circuits in Terms of the Return Ratio 100
Experimental Characterization of the Effective Recombination Velocity at the High-Low Transition of BSF Silicon Solar Cells 99
Analytical Model for GaAs PIN diodes for a Wide Range of Currents and Temperatures 96
Current Gain Enhancement Effect by Gate Doping in Bipolar Mode Field Effect Transistor 96
An Analysis of Thermal Behaviour of Bipolar-Mode JFET's 96
Investigation of 4H-SiC Bipolar Mode Field Effect Transistor (BMFET) as High Power Transistor 96
Modeling and Characterization of the OCVD Response at an Arbitrary Time and Injection Level 94
Power Handling Capabilities of a New Device: the Conductivity Controlled Transistor 93
A Two-dimensional Analytical Model of Homojunction GaAs BMFET Structures 90
An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current 90
Experimental Detection of Module Failure in Large Photovoltaic Arrays: Application to the Delphos Photovoltaic Plant 90
Modelling and characterisation of the input I-V curves of the Bipolar Jfet structures showing a negative Resistance behaviour 89
Recombination Lifetime Profiling in Very Thin Silicon Epitaxial Layers used for Bipolar VLSI 89
Characterization of Very Thin Epitaxial Layers 89
Dispositivi per la conversione termofotovoltaica 89
Analytical Model of the Effective Recombination Velocity of Diffused p-p+ (n-n+) High-Low Junctions at Artbitrary Injection Level 88
Performance analysis of a normally-off 4H-SiC trench bipolar-mode FET for power applications 86
Measurement of the Effective Recombination Velocity of Semiconductor High-Low Transitions 85
Experimental Analysis of the Temperature Dependence of the S.H.R. Lifetime and of the Apparent Bandgap Narrowing in n-type Silicon 85
Modello Analitico dei diodi P+-N-N+ alle Medie Correnti 83
On the Saturation Voltage of Bipolar Mode Vertical Jfet's 83
Numerical simulations of a 4H-SiC BMFET power transistors with normally-off characteristics 82
Electrical Characterization of Polysilicon/Monosilicon Interfaces 81
Recombination Measurement of n-type Heavily Doped Layer in High-Low Silicon Junctions 80
Electrical Characterization of Minority Carrier Recombination at the Polysilicon/Silicon Interface 80
Electrical Characterization of minority carrier transport parameters in n-type heavily doped silicon 78
Drain Current Optimization for a Very High Voltage Fast Switch Device with Bipolar Mode Jfet Structure 78
On-State Modeling of Power JFET Structures in the Bipolar Mode 75
Realization of a Normally-off Power Biopolar Mode JFET's 74
Comments on Direct Experimental Determination of Voltage Across High-Low Junctions 73
Electrical Characteristics of the Conductivity Controlled Transistor as a Power Device Structure 73
Detection of Recombination Centers in Epitaxial Layers by Temperature Scanning and Depth Lifetime Profiling 71
Electrical Measurement of Electron and Hole Mobilities as a Function of Injection Level in Silicon 66
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by means of a Special Test Structure 64
High-Voltage Bipolar Model JFET with normally-off Characteristics 60
Totale 14.278
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Categoria #
all - tutte 38.376
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 38.376
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021374 0 0 0 0 0 0 0 0 0 0 0 374
2021/2022692 0 0 4 2 18 22 9 19 100 92 136 290
2022/20231.285 117 93 22 159 159 269 25 165 196 1 50 29
2023/2024303 44 66 18 10 18 26 8 9 0 14 24 66
2024/20251.042 55 20 18 53 44 130 202 154 115 31 146 74
2025/20265.648 307 1.654 1.436 176 401 249 617 131 183 396 97 1
Totale 14.278