BELLONE, Salvatore
 Distribuzione geografica
Continente #
NA - Nord America 4.982
EU - Europa 1.807
AS - Asia 1.062
SA - Sud America 100
Continente sconosciuto - Info sul continente non disponibili 4
AF - Africa 3
Totale 7.958
Nazione #
US - Stati Uniti d'America 4.969
IT - Italia 675
UA - Ucraina 475
CN - Cina 381
VN - Vietnam 363
RU - Federazione Russa 176
SG - Singapore 176
DE - Germania 143
IE - Irlanda 125
FI - Finlandia 101
BR - Brasile 92
TR - Turchia 60
SE - Svezia 53
KR - Corea 52
NL - Olanda 30
CA - Canada 10
GB - Regno Unito 8
IN - India 6
JP - Giappone 5
AR - Argentina 4
CH - Svizzera 4
EU - Europa 4
FR - Francia 4
IL - Israele 4
AE - Emirati Arabi Uniti 3
BD - Bangladesh 3
CZ - Repubblica Ceca 3
RO - Romania 3
EC - Ecuador 2
AT - Austria 1
AZ - Azerbaigian 1
BN - Brunei Darussalam 1
CO - Colombia 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
ES - Italia 1
IQ - Iraq 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
LT - Lituania 1
LU - Lussemburgo 1
LV - Lettonia 1
MX - Messico 1
OM - Oman 1
PH - Filippine 1
PL - Polonia 1
PY - Paraguay 1
RS - Serbia 1
TN - Tunisia 1
TW - Taiwan 1
ZA - Sudafrica 1
Totale 7.958
Città #
Ann Arbor 1.296
Wilmington 648
Chandler 624
Jacksonville 577
Dong Ket 363
Princeton 354
Salerno 339
Woodbridge 337
Houston 221
Dublin 123
Nanjing 101
Andover 95
San Mango 94
Singapore 86
Boardman 79
Ashburn 75
Pellezzano 70
Izmir 56
Moscow 52
Hebei 48
Beijing 43
Mestre 34
Fairfield 33
Dearborn 31
Jiaxing 29
Shenyang 28
Changsha 24
Nanchang 24
Düsseldorf 23
Rome 21
Tianjin 18
Norwalk 15
Fisciano 11
Ottawa 10
Dallas 9
San Diego 9
Guangzhou 8
Washington 8
Belo Horizonte 7
Meppel 7
Council Bluffs 6
Grumo Nevano 6
Pune 6
Shanghai 6
Avellino 5
Hefei 5
Napoli 5
Cambridge 4
Des Moines 4
Dronten 4
Jinan 4
Los Angeles 4
Naples 4
Seattle 4
Spinea 4
Brno 3
Fuzhou 3
Helsinki 3
Redmond 3
Redwood City 3
Rio de Janeiro 3
Santa Clara 3
Abaetetuba 2
Airola 2
Arzano 2
Bucharest 2
Castelli Calepio 2
Chiswick 2
Dubai 2
Gaithersburg 2
Hanover 2
Indiana 2
Kirkland 2
Ningbo 2
Palermo 2
Salvador 2
San Francisco 2
Simi Valley 2
Sumaré 2
Swindon 2
São José 2
São Paulo 2
Taubaté 2
Tel Aviv 2
Torre Annunziata 2
Yubileyny 2
Adana 1
Agudos 1
Ajman 1
Alto Verê 1
Alytus 1
Amman 1
Amparo do Serra 1
Amsterdam 1
Ancona 1
Annaba 1
Antakya 1
Aracaju 1
Araxá 1
Asunción 1
Totale 6.184
Nome #
Synthesis and Characterization of a New Class of Nematic Photoluminescent Oxadiazole Containing Polyethers 179
Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes 164
Blue emitting OLED with oxadiazole/carbazole containing active layer 141
Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range 141
A Self-consistent Model of the Static and Switching Behaviour of 4H-SiC Diodes 140
A Self-Consistent Model of the OCVD Behaviour of Si and 4H-SiC P+-N-N+ Diodes 122
An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions 121
A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs 119
A Circuital Model of Switching Behaviour of 4H-SiC p + -n-n + Diodes Valid at any Current and Temperature 116
Design and Performances of 4H−SiC Bipolar Mode Field Effect Transistor (BMFETs) 115
An Analog Circuit for Accurate OCVD Measurements 114
Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications 113
A Novel Measurement Method of the Spatial Carrier Lifetime Profile Based on the OCVD Technique 112
Synthesis and luminescent properties of a new class of nematic oxadiazole containing poly-ethers for PLED 111
Blue Emitting OLED with oxadiazole/carbazole containing active layer 110
An analytical model of the potential barrier for the ID-VGS curves calculation of 4H-SiC Bipolar JFETs 109
Analytical prediction of the cross−over point in the temperature coefficient of the forward characteristics of 4H−SiC p+−i−n diodes 109
Analytical description of the input capacitance of 4H-SiC DMOSFET’s in presence of oxide-semiconductor interface traps 109
Synthesis and characterization of new electroluminescent molecules containing carbazole and oxadiazole units 107
A model of the off-behaviour of 4H–SiC power JFETs 105
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode 105
A Model of the ID-VGS Characteristics of Normally-Off 4H-SiC Bipolar JFETs 103
Electronic Devices based on thin films and nanostructures 102
Switching device based on a thin film of an azo containing polymer for application in memory cells. 102
Al+ Implanted Anode for 4H-SiC p-i-n Diodes 100
Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET 98
Electrical Characterization of Very Thin Si Epitaxial Layers used for Bipolar VLSI 94
AN ANALYTICAL MODEL OF AN OCVD-BASED MEASUREMENT TECHNIQUE OFTHE LOCAL CARRIER LIFETIME 93
Polymer Processing in OLED Application 93
Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell 91
Blue electroluminescence from films of poly(n-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 91
AZO CONTAINING POLYMER AS ACTIVE LAYERIN MEMORY CELLS PROTOTYPES 89
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 86
Temperature Dependency of the Forward Characteristics of 4H-SiC DMOSFETin Presence of SiO2/SiC Interface Traps 86
Electrical Characterization of Minority Carrier Recombination Phenomena in Silicon 85
Analytical Model of GaAs BMFET Structures 85
A Measurement method of the ideal I-V characteristics of diodes up to the built-in voltage limit 84
A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature 84
On the analogy of the potential barrier of trenched JFET and JBS devices 83
The effect of ITO surface energy on OLED electrical porperties 82
Extension of the TPA Method for the Exact Analysis of Feedback Circuits in Terms of the Return Ratio 81
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs 80
Analysis of a New Test Structures for Carrier-Carrier Scattering Mobilities versus Injection Level in Silicon 79
Stability of amorphous silicon films and a-Si:H/c-Si heterojunctions under high energy particle irradiation 79
Blue electroluminescence from films of poly(N-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 79
Physical Model, Measurement set-up and experiments of a Measurement technique of the carrier lifetime Profile in Power devices 79
On the Electrical Behavior of V2O5/4H-SiC Schottky Diodes 78
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 77
Experimental measurements of Majority and Minority Carrier Lifetime Profile in Si- epilayers by the use of an improved OCVD method 77
An Analytical Model for p+-n-n+ (n+-p-p+) Epitaxial Diodes Valid from Low to High Injection Levels 77
Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures 76
Test structure Design for the Evaluation of Carrier-Carrier Scattering Effect on Hole and Electron Mobilities 76
LIMITATIONS OF THE OPEN-CIRCUIT VOLTAGE DECAY TECHNIQUE APPLIED TO 4H-SIC DIODES 76
On the Crossing-Point of 4H-SiC Power Diodes Chararacteristics 75
A new Measurement Technique for the Conductivity Mobility versus Injection Level in Silicon 74
A Measurement Method of the Injection Level Dependence of the Conductivity Mobility in Silicon 74
A 50W, 50MHz Conductivity Controlled Transistor 74
Efficient low temperature cSi surface passivation using aSi grown by PECVD 72
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 71
Analytical Model for GaAs PIN diodes for a Wide Range of Currents and Temperatures 71
A Quasi-one Dimensional Analysis of Vertical JFET Device Operated in the Bipolar Mode 71
An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current 71
Current Gain Enhancement Effect by Gate Doping in Bipolar Mode Field Effect Transistor 70
A New Method for the Measurement of the Conductivity Mobility as a Function of the Injection Level in Silicon Regions 70
Experimental Characterization of the Effective Recombination Velocity at the High-Low Transition of BSF Silicon Solar Cells 70
A New Test Structure for in-depth Lifetime Profiling of Thin Si Epitaxial Layers 69
Modelling and characterisation of the input I-V curves of the Bipolar Jfet structures showing a negative Resistance behaviour 68
An Analysis of Thermal Behaviour of Bipolar-Mode JFET's 68
Analytical Model of the Effective Recombination Velocity of Diffused p-p+ (n-n+) High-Low Junctions at Artbitrary Injection Level 68
Two-Port Analysis of Feedback Circuits in Terms of the Return Ratio 68
Investigation of 4H-SiC Bipolar Mode Field Effect Transistor (BMFET) as High Power Transistor 66
A Two-dimensional Analytical Model of Homojunction GaAs BMFET Structures 65
A New Test Structure for the Evaluation of the Injection - Level Dependence of Carrier Mobilities 65
Modeling and Characterization of the OCVD Response at an Arbitrary Time and Injection Level 64
Characterization of Very Thin Epitaxial Layers 64
A New Test Structure for Recombination Measurements in Thin Silicon Layers for VLSI Structures 63
Recombination Lifetime Profiling in Very Thin Silicon Epitaxial Layers used for Bipolar VLSI 63
Experimental Analysis of the Temperature Dependence of the S.H.R. Lifetime and of the Apparent Bandgap Narrowing in n-type Silicon 61
Power Handling Capabilities of a New Device: the Conductivity Controlled Transistor 61
Recombination Measurement of n-type Heavily Doped Layer in High-Low Silicon Junctions 59
Numerical simulations of a 4H-SiC BMFET power transistors with normally-off characteristics 59
Experimental Detection of Module Failure in Large Photovoltaic Arrays: Application to the Delphos Photovoltaic Plant 59
Dispositivi per la conversione termofotovoltaica 59
On the Saturation Voltage of Bipolar Mode Vertical Jfet's 58
Electrical Characterization of Polysilicon/Monosilicon Interfaces 58
Modello Analitico dei diodi P+-N-N+ alle Medie Correnti 57
Realization of a Normally-off Power Biopolar Mode JFET's 56
Measurement of the Effective Recombination Velocity of Semiconductor High-Low Transitions 55
Electrical Characterization of Minority Carrier Recombination at the Polysilicon/Silicon Interface 53
Electrical Characterization of minority carrier transport parameters in n-type heavily doped silicon 53
Performance analysis of a normally-off 4H-SiC trench bipolar-mode FET for power applications 53
Drain Current Optimization for a Very High Voltage Fast Switch Device with Bipolar Mode Jfet Structure 52
Comments on Direct Experimental Determination of Voltage Across High-Low Junctions 50
On-State Modeling of Power JFET Structures in the Bipolar Mode 50
Electrical Characteristics of the Conductivity Controlled Transistor as a Power Device Structure 49
Detection of Recombination Centers in Epitaxial Layers by Temperature Scanning and Depth Lifetime Profiling 49
Electrical Measurement of Electron and Hole Mobilities as a Function of Injection Level in Silicon 46
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by means of a Special Test Structure 46
High-Voltage Bipolar Model JFET with normally-off Characteristics 41
Totale 8.145
Categoria #
all - tutte 22.823
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 22.823


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020294 0 0 0 0 0 0 0 3 102 53 124 12
2020/2021982 5 96 96 0 105 12 99 0 94 0 101 374
2021/2022692 0 0 4 2 18 22 9 19 100 92 136 290
2022/20231.285 117 93 22 159 159 269 25 165 196 1 50 29
2023/2024303 44 66 18 10 18 26 8 9 0 14 24 66
2024/2025557 55 20 18 53 44 130 202 35 0 0 0 0
Totale 8.145