UniSa - IRIS Institutional Research Information System

BELLONE, Salvatore
 Distribuzione geografica
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Continente #
NA - Nord America 5.549
AS - Asia 4.545
EU - Europa 1.944
SA - Sud America 232
AF - Africa 16
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 4
Totale 12.295
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Nazione #
US - Stati Uniti d'America 5.512
HK - Hong Kong 2.900
IT - Italia 684
SG - Singapore 565
CN - Cina 499
UA - Ucraina 476
VN - Vietnam 385
BR - Brasile 202
RU - Federazione Russa 178
DE - Germania 174
IE - Irlanda 125
FI - Finlandia 121
KR - Corea 65
SE - Svezia 62
TR - Turchia 61
NL - Olanda 34
GB - Regno Unito 29
CA - Canada 21
IN - India 21
AR - Argentina 17
JP - Giappone 13
ES - Italia 10
PL - Polonia 10
ZA - Sudafrica 10
LT - Lituania 9
MX - Messico 9
BD - Bangladesh 7
FR - Francia 7
AT - Austria 6
CH - Svizzera 5
CO - Colombia 5
EC - Ecuador 5
IL - Israele 5
CZ - Repubblica Ceca 4
EU - Europa 4
AE - Emirati Arabi Uniti 3
RO - Romania 3
AU - Australia 2
DO - Repubblica Dominicana 2
IQ - Iraq 2
LA - Repubblica Popolare Democratica del Laos 2
MA - Marocco 2
OM - Oman 2
PK - Pakistan 2
PY - Paraguay 2
AD - Andorra 1
AO - Angola 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BN - Brunei Darussalam 1
CR - Costa Rica 1
CU - Cuba 1
DZ - Algeria 1
ID - Indonesia 1
IR - Iran 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
LU - Lussemburgo 1
LV - Lettonia 1
ME - Montenegro 1
MY - Malesia 1
NC - Nuova Caledonia 1
PA - Panama 1
PE - Perù 1
PG - Papua Nuova Guinea 1
PH - Filippine 1
PT - Portogallo 1
RS - Serbia 1
SA - Arabia Saudita 1
SN - Senegal 1
TN - Tunisia 1
TW - Taiwan 1
UZ - Uzbekistan 1
XK - ???statistics.table.value.countryCode.XK??? 1
YE - Yemen 1
Totale 12.295
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Città #
Hong Kong 2.900
Ann Arbor 1.296
Wilmington 648
Chandler 624
Jacksonville 577
Dong Ket 363
Princeton 354
Salerno 339
Woodbridge 337
Dallas 233
Houston 225
Singapore 181
Ashburn 123
Dublin 123
Nanjing 101
Andover 95
San Mango 94
Beijing 85
Boardman 79
Pellezzano 70
Izmir 56
Moscow 53
Hebei 48
Mestre 34
Fairfield 33
Dearborn 31
Jiaxing 29
Shenyang 28
Council Bluffs 27
Los Angeles 26
Rome 26
Changsha 24
Nanchang 24
Düsseldorf 23
Munich 22
New York 21
São Paulo 19
Tianjin 18
Turku 17
Norwalk 15
Santa Clara 15
Brooklyn 12
Fisciano 12
The Dalles 11
Belo Horizonte 10
Chicago 10
Ottawa 10
Stockholm 10
Chennai 9
Phoenix 9
San Diego 9
Warsaw 9
Atlanta 8
Guangzhou 8
Rio de Janeiro 8
Tokyo 8
Washington 8
Boston 7
Charlotte 7
Ho Chi Minh City 7
Johannesburg 7
Meppel 7
Shanghai 7
Columbus 6
Grumo Nevano 6
Helsinki 6
London 6
Manchester 6
Pune 6
San Francisco 6
Amsterdam 5
Avellino 5
Des Moines 5
Hanoi 5
Hefei 5
Napoli 5
Orem 5
Brno 4
Cambridge 4
Dronten 4
Fortaleza 4
Jinan 4
Montreal 4
Naples 4
Nuremberg 4
Seattle 4
Spinea 4
Toronto 4
Curitiba 3
Denver 3
Frankfurt am Main 3
Fuzhou 3
Laboulaye 3
Mumbai 3
Paris 3
Poplar 3
Redmond 3
Redwood City 3
Salvador 3
Seoul 3
Totale 9.786
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Nome #
A Circuital Model of Switching Behaviour of 4H-SiC p + -n-n + Diodes Valid at any Current and Temperature 806
A Measurement Method of the Injection Level Dependence of the Conductivity Mobility in Silicon 589
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs 418
A Self-Consistent Model of the OCVD Behaviour of Si and 4H-SiC P+-N-N+ Diodes 409
A Measurement method of the ideal I-V characteristics of diodes up to the built-in voltage limit 356
LIMITATIONS OF THE OPEN-CIRCUIT VOLTAGE DECAY TECHNIQUE APPLIED TO 4H-SIC DIODES 304
Analytical prediction of the cross−over point in the temperature coefficient of the forward characteristics of 4H−SiC p+−i−n diodes 214
A New Test Structure for Recombination Measurements in Thin Silicon Layers for VLSI Structures 208
Synthesis and Characterization of a New Class of Nematic Photoluminescent Oxadiazole Containing Polyethers 198
Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell 198
A New Method for the Measurement of the Conductivity Mobility as a Function of the Injection Level in Silicon Regions 184
Blue emitting OLED with oxadiazole/carbazole containing active layer 181
Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes 177
A Novel Measurement Method of the Spatial Carrier Lifetime Profile Based on the OCVD Technique 162
A Self-consistent Model of the Static and Switching Behaviour of 4H-SiC Diodes 162
Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range 161
Blue electroluminescence from films of poly(n-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 158
Blue Emitting OLED with oxadiazole/carbazole containing active layer 155
A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs 149
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode 146
Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications 140
An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions 139
A Model of the ID-VGS Characteristics of Normally-Off 4H-SiC Bipolar JFETs 137
A model of the off-behaviour of 4H–SiC power JFETs 134
Analytical description of the input capacitance of 4H-SiC DMOSFET’s in presence of oxide-semiconductor interface traps 133
An Analog Circuit for Accurate OCVD Measurements 130
Design and Performances of 4H−SiC Bipolar Mode Field Effect Transistor (BMFETs) 128
Synthesis and characterization of new electroluminescent molecules containing carbazole and oxadiazole units 127
Synthesis and luminescent properties of a new class of nematic oxadiazole containing poly-ethers for PLED 126
An analytical model of the potential barrier for the ID-VGS curves calculation of 4H-SiC Bipolar JFETs 123
Electronic Devices based on thin films and nanostructures 120
AZO CONTAINING POLYMER AS ACTIVE LAYERIN MEMORY CELLS PROTOTYPES 120
A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature 119
Al+ Implanted Anode for 4H-SiC p-i-n Diodes 115
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 113
Switching device based on a thin film of an azo containing polymer for application in memory cells. 113
A Quasi-one Dimensional Analysis of Vertical JFET Device Operated in the Bipolar Mode 112
Blue electroluminescence from films of poly(N-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 111
A new Measurement Technique for the Conductivity Mobility versus Injection Level in Silicon 109
Electrical Characterization of Very Thin Si Epitaxial Layers used for Bipolar VLSI 108
Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET 108
Polymer Processing in OLED Application 105
AN ANALYTICAL MODEL OF AN OCVD-BASED MEASUREMENT TECHNIQUE OFTHE LOCAL CARRIER LIFETIME 103
A 50W, 50MHz Conductivity Controlled Transistor 101
Analytical Model of GaAs BMFET Structures 98
On the analogy of the potential barrier of trenched JFET and JBS devices 98
Electrical Characterization of Minority Carrier Recombination Phenomena in Silicon 96
Temperature Dependency of the Forward Characteristics of 4H-SiC DMOSFETin Presence of SiO2/SiC Interface Traps 96
A New Test Structure for in-depth Lifetime Profiling of Thin Si Epitaxial Layers 95
The effect of ITO surface energy on OLED electrical porperties 94
A New Test Structure for the Evaluation of the Injection - Level Dependence of Carrier Mobilities 94
On the Crossing-Point of 4H-SiC Power Diodes Chararacteristics 93
Stability of amorphous silicon films and a-Si:H/c-Si heterojunctions under high energy particle irradiation 92
Physical Model, Measurement set-up and experiments of a Measurement technique of the carrier lifetime Profile in Power devices 92
Efficient low temperature cSi surface passivation using aSi grown by PECVD 92
Extension of the TPA Method for the Exact Analysis of Feedback Circuits in Terms of the Return Ratio 92
Experimental measurements of Majority and Minority Carrier Lifetime Profile in Si- epilayers by the use of an improved OCVD method 91
On the Electrical Behavior of V2O5/4H-SiC Schottky Diodes 90
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 89
Analysis of a New Test Structures for Carrier-Carrier Scattering Mobilities versus Injection Level in Silicon 88
Test structure Design for the Evaluation of Carrier-Carrier Scattering Effect on Hole and Electron Mobilities 87
An Analytical Model for p+-n-n+ (n+-p-p+) Epitaxial Diodes Valid from Low to High Injection Levels 87
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 86
Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures 86
An Analysis of Thermal Behaviour of Bipolar-Mode JFET's 84
A Two-dimensional Analytical Model of Homojunction GaAs BMFET Structures 82
Two-Port Analysis of Feedback Circuits in Terms of the Return Ratio 82
Analytical Model for GaAs PIN diodes for a Wide Range of Currents and Temperatures 81
Current Gain Enhancement Effect by Gate Doping in Bipolar Mode Field Effect Transistor 81
Analytical Model of the Effective Recombination Velocity of Diffused p-p+ (n-n+) High-Low Junctions at Artbitrary Injection Level 80
Modeling and Characterization of the OCVD Response at an Arbitrary Time and Injection Level 79
Experimental Characterization of the Effective Recombination Velocity at the High-Low Transition of BSF Silicon Solar Cells 79
Modelling and characterisation of the input I-V curves of the Bipolar Jfet structures showing a negative Resistance behaviour 78
An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current 77
Investigation of 4H-SiC Bipolar Mode Field Effect Transistor (BMFET) as High Power Transistor 76
Characterization of Very Thin Epitaxial Layers 75
Recombination Lifetime Profiling in Very Thin Silicon Epitaxial Layers used for Bipolar VLSI 73
Power Handling Capabilities of a New Device: the Conductivity Controlled Transistor 73
Experimental Analysis of the Temperature Dependence of the S.H.R. Lifetime and of the Apparent Bandgap Narrowing in n-type Silicon 71
Numerical simulations of a 4H-SiC BMFET power transistors with normally-off characteristics 70
Performance analysis of a normally-off 4H-SiC trench bipolar-mode FET for power applications 70
Recombination Measurement of n-type Heavily Doped Layer in High-Low Silicon Junctions 69
Electrical Characterization of Polysilicon/Monosilicon Interfaces 69
Modello Analitico dei diodi P+-N-N+ alle Medie Correnti 68
Experimental Detection of Module Failure in Large Photovoltaic Arrays: Application to the Delphos Photovoltaic Plant 68
Dispositivi per la conversione termofotovoltaica 68
On the Saturation Voltage of Bipolar Mode Vertical Jfet's 67
Measurement of the Effective Recombination Velocity of Semiconductor High-Low Transitions 64
Electrical Characterization of Minority Carrier Recombination at the Polysilicon/Silicon Interface 64
Electrical Characterization of minority carrier transport parameters in n-type heavily doped silicon 64
Drain Current Optimization for a Very High Voltage Fast Switch Device with Bipolar Mode Jfet Structure 64
Realization of a Normally-off Power Biopolar Mode JFET's 63
Comments on Direct Experimental Determination of Voltage Across High-Low Junctions 61
Electrical Characteristics of the Conductivity Controlled Transistor as a Power Device Structure 60
On-State Modeling of Power JFET Structures in the Bipolar Mode 59
Detection of Recombination Centers in Epitaxial Layers by Temperature Scanning and Depth Lifetime Profiling 58
Electrical Measurement of Electron and Hole Mobilities as a Function of Injection Level in Silicon 56
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by means of a Special Test Structure 54
High-Voltage Bipolar Model JFET with normally-off Characteristics 50
Totale 12.482
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Categoria #
all - tutte 34.661
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 34.661
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021785 0 0 0 0 105 12 99 0 94 0 101 374
2021/2022692 0 0 4 2 18 22 9 19 100 92 136 290
2022/20231.285 117 93 22 159 159 269 25 165 196 1 50 29
2023/2024303 44 66 18 10 18 26 8 9 0 14 24 66
2024/20251.042 55 20 18 53 44 130 202 154 115 31 146 74
2025/20263.852 307 1.654 1.436 176 279 0 0 0 0 0 0 0
Totale 12.482