UniSa - IRIS Institutional Research Information System

BELLONE, Salvatore
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 5.545
AS - Asia 4.332
EU - Europa 1.939
SA - Sud America 223
AF - Africa 13
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 4
Totale 12.061
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 5.509
HK - Hong Kong 2.900
IT - Italia 684
CN - Cina 490
UA - Ucraina 476
SG - Singapore 384
VN - Vietnam 365
BR - Brasile 201
RU - Federazione Russa 177
DE - Germania 171
IE - Irlanda 125
FI - Finlandia 121
KR - Corea 65
SE - Svezia 62
TR - Turchia 61
NL - Olanda 34
GB - Regno Unito 29
CA - Canada 21
IN - India 20
JP - Giappone 13
ES - Italia 10
PL - Polonia 10
AR - Argentina 9
LT - Lituania 9
MX - Messico 8
FR - Francia 7
ZA - Sudafrica 7
AT - Austria 6
BD - Bangladesh 6
CH - Svizzera 5
CO - Colombia 5
EC - Ecuador 5
IL - Israele 5
CZ - Repubblica Ceca 4
EU - Europa 4
AE - Emirati Arabi Uniti 3
RO - Romania 3
AU - Australia 2
DO - Repubblica Dominicana 2
IQ - Iraq 2
LA - Repubblica Popolare Democratica del Laos 2
MA - Marocco 2
OM - Oman 2
PK - Pakistan 2
PY - Paraguay 2
AD - Andorra 1
AO - Angola 1
AZ - Azerbaigian 1
BB - Barbados 1
BN - Brunei Darussalam 1
CR - Costa Rica 1
CU - Cuba 1
DZ - Algeria 1
ID - Indonesia 1
IR - Iran 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
LU - Lussemburgo 1
LV - Lettonia 1
ME - Montenegro 1
MY - Malesia 1
NC - Nuova Caledonia 1
PA - Panama 1
PE - Perù 1
PG - Papua Nuova Guinea 1
PH - Filippine 1
PT - Portogallo 1
RS - Serbia 1
SN - Senegal 1
TN - Tunisia 1
TW - Taiwan 1
UZ - Uzbekistan 1
XK - ???statistics.table.value.countryCode.XK??? 1
YE - Yemen 1
Totale 12.061
Salva come PNG Salva come JPEG
Città #
Hong Kong 2.900
Ann Arbor 1.296
Wilmington 648
Chandler 624
Jacksonville 577
Dong Ket 363
Princeton 354
Salerno 339
Woodbridge 337
Dallas 233
Houston 225
Singapore 125
Dublin 123
Ashburn 122
Nanjing 101
Andover 95
San Mango 94
Beijing 80
Boardman 79
Pellezzano 70
Izmir 56
Moscow 52
Hebei 48
Mestre 34
Fairfield 33
Dearborn 31
Jiaxing 29
Shenyang 28
Council Bluffs 27
Los Angeles 26
Rome 26
Changsha 24
Nanchang 24
Düsseldorf 23
Munich 22
New York 20
São Paulo 19
Tianjin 18
Turku 17
Norwalk 15
Santa Clara 15
Brooklyn 12
Fisciano 12
The Dalles 11
Belo Horizonte 10
Ottawa 10
Stockholm 10
Chicago 9
Phoenix 9
San Diego 9
Warsaw 9
Atlanta 8
Chennai 8
Guangzhou 8
Rio de Janeiro 8
Tokyo 8
Washington 8
Boston 7
Charlotte 7
Meppel 7
Columbus 6
Grumo Nevano 6
Helsinki 6
Johannesburg 6
London 6
Manchester 6
Pune 6
San Francisco 6
Shanghai 6
Amsterdam 5
Avellino 5
Des Moines 5
Hefei 5
Napoli 5
Orem 5
Brno 4
Cambridge 4
Dronten 4
Fortaleza 4
Jinan 4
Montreal 4
Naples 4
Nuremberg 4
Seattle 4
Spinea 4
Toronto 4
Curitiba 3
Denver 3
Fuzhou 3
Mumbai 3
Paris 3
Poplar 3
Redmond 3
Redwood City 3
Salvador 3
Seoul 3
Sorocaba 3
Wuhan 3
Abaetetuba 2
Airola 2
Totale 9.710
Salva come PNG Salva come JPEG
Nome #
A Circuital Model of Switching Behaviour of 4H-SiC p + -n-n + Diodes Valid at any Current and Temperature 803
A Measurement Method of the Injection Level Dependence of the Conductivity Mobility in Silicon 586
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs 414
A Self-Consistent Model of the OCVD Behaviour of Si and 4H-SiC P+-N-N+ Diodes 406
A Measurement method of the ideal I-V characteristics of diodes up to the built-in voltage limit 353
LIMITATIONS OF THE OPEN-CIRCUIT VOLTAGE DECAY TECHNIQUE APPLIED TO 4H-SIC DIODES 299
Analytical prediction of the cross−over point in the temperature coefficient of the forward characteristics of 4H−SiC p+−i−n diodes 213
A New Test Structure for Recombination Measurements in Thin Silicon Layers for VLSI Structures 204
Synthesis and Characterization of a New Class of Nematic Photoluminescent Oxadiazole Containing Polyethers 196
Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell 196
A New Method for the Measurement of the Conductivity Mobility as a Function of the Injection Level in Silicon Regions 181
Blue emitting OLED with oxadiazole/carbazole containing active layer 177
Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes 176
A Self-consistent Model of the Static and Switching Behaviour of 4H-SiC Diodes 160
Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range 158
A Novel Measurement Method of the Spatial Carrier Lifetime Profile Based on the OCVD Technique 157
Blue electroluminescence from films of poly(n-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 150
Blue Emitting OLED with oxadiazole/carbazole containing active layer 147
A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs 147
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode 143
Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications 139
An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions 137
A Model of the ID-VGS Characteristics of Normally-Off 4H-SiC Bipolar JFETs 133
Analytical description of the input capacitance of 4H-SiC DMOSFET’s in presence of oxide-semiconductor interface traps 132
A model of the off-behaviour of 4H–SiC power JFETs 130
An Analog Circuit for Accurate OCVD Measurements 129
Design and Performances of 4H−SiC Bipolar Mode Field Effect Transistor (BMFETs) 125
Synthesis and luminescent properties of a new class of nematic oxadiazole containing poly-ethers for PLED 123
Synthesis and characterization of new electroluminescent molecules containing carbazole and oxadiazole units 123
An analytical model of the potential barrier for the ID-VGS curves calculation of 4H-SiC Bipolar JFETs 122
Electronic Devices based on thin films and nanostructures 116
AZO CONTAINING POLYMER AS ACTIVE LAYERIN MEMORY CELLS PROTOTYPES 116
A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature 115
Switching device based on a thin film of an azo containing polymer for application in memory cells. 111
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 110
Al+ Implanted Anode for 4H-SiC p-i-n Diodes 110
A Quasi-one Dimensional Analysis of Vertical JFET Device Operated in the Bipolar Mode 108
Blue electroluminescence from films of poly(N-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 107
Electrical Characterization of Very Thin Si Epitaxial Layers used for Bipolar VLSI 107
Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET 107
Polymer Processing in OLED Application 104
A new Measurement Technique for the Conductivity Mobility versus Injection Level in Silicon 104
AN ANALYTICAL MODEL OF AN OCVD-BASED MEASUREMENT TECHNIQUE OFTHE LOCAL CARRIER LIFETIME 102
A 50W, 50MHz Conductivity Controlled Transistor 97
On the analogy of the potential barrier of trenched JFET and JBS devices 97
Analytical Model of GaAs BMFET Structures 96
Electrical Characterization of Minority Carrier Recombination Phenomena in Silicon 95
Temperature Dependency of the Forward Characteristics of 4H-SiC DMOSFETin Presence of SiO2/SiC Interface Traps 95
The effect of ITO surface energy on OLED electrical porperties 93
A New Test Structure for in-depth Lifetime Profiling of Thin Si Epitaxial Layers 92
On the Crossing-Point of 4H-SiC Power Diodes Chararacteristics 92
Stability of amorphous silicon films and a-Si:H/c-Si heterojunctions under high energy particle irradiation 91
Extension of the TPA Method for the Exact Analysis of Feedback Circuits in Terms of the Return Ratio 91
Efficient low temperature cSi surface passivation using aSi grown by PECVD 90
Experimental measurements of Majority and Minority Carrier Lifetime Profile in Si- epilayers by the use of an improved OCVD method 89
Physical Model, Measurement set-up and experiments of a Measurement technique of the carrier lifetime Profile in Power devices 89
A New Test Structure for the Evaluation of the Injection - Level Dependence of Carrier Mobilities 89
On the Electrical Behavior of V2O5/4H-SiC Schottky Diodes 88
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 87
Analysis of a New Test Structures for Carrier-Carrier Scattering Mobilities versus Injection Level in Silicon 87
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 85
An Analytical Model for p+-n-n+ (n+-p-p+) Epitaxial Diodes Valid from Low to High Injection Levels 85
Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures 84
Test structure Design for the Evaluation of Carrier-Carrier Scattering Effect on Hole and Electron Mobilities 84
An Analysis of Thermal Behaviour of Bipolar-Mode JFET's 82
A Two-dimensional Analytical Model of Homojunction GaAs BMFET Structures 81
Analytical Model for GaAs PIN diodes for a Wide Range of Currents and Temperatures 80
Current Gain Enhancement Effect by Gate Doping in Bipolar Mode Field Effect Transistor 79
Modeling and Characterization of the OCVD Response at an Arbitrary Time and Injection Level 78
Analytical Model of the Effective Recombination Velocity of Diffused p-p+ (n-n+) High-Low Junctions at Artbitrary Injection Level 78
Experimental Characterization of the Effective Recombination Velocity at the High-Low Transition of BSF Silicon Solar Cells 78
Two-Port Analysis of Feedback Circuits in Terms of the Return Ratio 77
An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current 76
Modelling and characterisation of the input I-V curves of the Bipolar Jfet structures showing a negative Resistance behaviour 75
Investigation of 4H-SiC Bipolar Mode Field Effect Transistor (BMFET) as High Power Transistor 75
Characterization of Very Thin Epitaxial Layers 73
Recombination Lifetime Profiling in Very Thin Silicon Epitaxial Layers used for Bipolar VLSI 71
Power Handling Capabilities of a New Device: the Conductivity Controlled Transistor 71
Experimental Analysis of the Temperature Dependence of the S.H.R. Lifetime and of the Apparent Bandgap Narrowing in n-type Silicon 69
Numerical simulations of a 4H-SiC BMFET power transistors with normally-off characteristics 68
Electrical Characterization of Polysilicon/Monosilicon Interfaces 68
Recombination Measurement of n-type Heavily Doped Layer in High-Low Silicon Junctions 67
Dispositivi per la conversione termofotovoltaica 67
Performance analysis of a normally-off 4H-SiC trench bipolar-mode FET for power applications 67
Experimental Detection of Module Failure in Large Photovoltaic Arrays: Application to the Delphos Photovoltaic Plant 66
Modello Analitico dei diodi P+-N-N+ alle Medie Correnti 65
On the Saturation Voltage of Bipolar Mode Vertical Jfet's 65
Measurement of the Effective Recombination Velocity of Semiconductor High-Low Transitions 63
Drain Current Optimization for a Very High Voltage Fast Switch Device with Bipolar Mode Jfet Structure 63
Electrical Characterization of Minority Carrier Recombination at the Polysilicon/Silicon Interface 62
Electrical Characterization of minority carrier transport parameters in n-type heavily doped silicon 62
Realization of a Normally-off Power Biopolar Mode JFET's 61
Comments on Direct Experimental Determination of Voltage Across High-Low Junctions 60
Electrical Characteristics of the Conductivity Controlled Transistor as a Power Device Structure 59
On-State Modeling of Power JFET Structures in the Bipolar Mode 58
Detection of Recombination Centers in Epitaxial Layers by Temperature Scanning and Depth Lifetime Profiling 56
Electrical Measurement of Electron and Hole Mobilities as a Function of Injection Level in Silicon 55
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by means of a Special Test Structure 52
High-Voltage Bipolar Model JFET with normally-off Characteristics 49
Totale 12.248
Salva come PNG Salva come JPEG
Categoria #
all - tutte 34.159
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 34.159
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021785 0 0 0 0 105 12 99 0 94 0 101 374
2021/2022692 0 0 4 2 18 22 9 19 100 92 136 290
2022/20231.285 117 93 22 159 159 269 25 165 196 1 50 29
2023/2024303 44 66 18 10 18 26 8 9 0 14 24 66
2024/20251.042 55 20 18 53 44 130 202 154 115 31 146 74
2025/20263.618 307 1.654 1.436 176 45 0 0 0 0 0 0 0
Totale 12.248