BELLONE, Salvatore
 Distribuzione geografica
Continente #
NA - Nord America 4.937
EU - Europa 1.603
AS - Asia 807
Continente sconosciuto - Info sul continente non disponibili 4
AF - Africa 1
Totale 7.352
Nazione #
US - Stati Uniti d'America 4.926
IT - Italia 645
UA - Ucraina 475
VN - Vietnam 363
CN - Cina 346
DE - Germania 143
IE - Irlanda 125
FI - Finlandia 98
TR - Turchia 57
SE - Svezia 53
NL - Olanda 30
SG - Singapore 23
RU - Federazione Russa 12
CA - Canada 10
GB - Regno Unito 8
IN - India 6
JP - Giappone 5
EU - Europa 4
FR - Francia 4
IL - Israele 4
RO - Romania 3
CH - Svizzera 1
DZ - Algeria 1
ES - Italia 1
KH - Cambogia 1
LT - Lituania 1
LU - Lussemburgo 1
LV - Lettonia 1
MX - Messico 1
PH - Filippine 1
PL - Polonia 1
RS - Serbia 1
TW - Taiwan 1
Totale 7.352
Città #
Ann Arbor 1.296
Wilmington 648
Chandler 624
Jacksonville 577
Dong Ket 363
Princeton 354
Salerno 339
Woodbridge 337
Houston 221
Dublin 123
Nanjing 101
Andover 95
San Mango 94
Boardman 79
Pellezzano 70
Ashburn 59
Izmir 56
Hebei 48
Beijing 40
Mestre 34
Fairfield 33
Dearborn 31
Jiaxing 29
Shenyang 28
Changsha 24
Nanchang 24
Düsseldorf 23
Tianjin 18
Norwalk 15
Fisciano 11
Ottawa 10
Singapore 10
San Diego 9
Washington 8
Meppel 7
Grumo Nevano 6
Guangzhou 6
Pune 6
Avellino 5
Hefei 5
Napoli 5
Cambridge 4
Des Moines 4
Dronten 4
Jinan 4
Los Angeles 4
Seattle 4
Spinea 4
Fuzhou 3
Redmond 3
Redwood City 3
Shanghai 3
Airola 2
Arzano 2
Bucharest 2
Chiswick 2
Gaithersburg 2
Hanover 2
Indiana 2
Kirkland 2
Ningbo 2
Palermo 2
Rome 2
Simi Valley 2
Swindon 2
Tel Aviv 2
Torre Annunziata 2
Alytus 1
Amsterdam 1
Ancona 1
Annaba 1
Baronissi 1
Belgrade 1
Buonabitacolo 1
Caivano 1
Charlotte 1
Costa Mesa 1
Dormagen 1
Dreieich 1
Duncan 1
Edinburgh 1
Foshan 1
Grevenbroich 1
Hiroshima 1
Istanbul 1
Lappeenranta 1
London 1
Luxembourg 1
Madrid 1
Martigues 1
Melfi 1
Metairie 1
Mirabella Eclano 1
Mobile 1
Moscow 1
Mottalciata 1
Nürnberg 1
Padova 1
Phnom Penh 1
Phoenix 1
Totale 5.974
Nome #
Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes 157
Synthesis and Characterization of a New Class of Nematic Photoluminescent Oxadiazole Containing Polyethers 150
Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range 137
A Self-consistent Model of the Static and Switching Behaviour of 4H-SiC Diodes 129
An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions 114
A Self-Consistent Model of the OCVD Behaviour of Si and 4H-SiC P+-N-N+ Diodes 113
An Analog Circuit for Accurate OCVD Measurements 111
Design and Performances of 4H−SiC Bipolar Mode Field Effect Transistor (BMFETs) 111
Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications 110
Blue emitting OLED with oxadiazole/carbazole containing active layer 108
A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs 107
Synthesis and luminescent properties of a new class of nematic oxadiazole containing poly-ethers for PLED 106
Analytical prediction of the cross−over point in the temperature coefficient of the forward characteristics of 4H−SiC p+−i−n diodes 106
An analytical model of the potential barrier for the ID-VGS curves calculation of 4H-SiC Bipolar JFETs 105
Analytical description of the input capacitance of 4H-SiC DMOSFET’s in presence of oxide-semiconductor interface traps 105
A Circuital Model of Switching Behaviour of 4H-SiC p + -n-n + Diodes Valid at any Current and Temperature 101
Electronic Devices based on thin films and nanostructures 100
A Novel Measurement Method of the Spatial Carrier Lifetime Profile Based on the OCVD Technique 99
Synthesis and characterization of new electroluminescent molecules containing carbazole and oxadiazole units 99
Switching device based on a thin film of an azo containing polymer for application in memory cells. 98
Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET 96
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode 96
Blue Emitting OLED with oxadiazole/carbazole containing active layer 94
Al+ Implanted Anode for 4H-SiC p-i-n Diodes 94
A Model of the ID-VGS Characteristics of Normally-Off 4H-SiC Bipolar JFETs 93
AN ANALYTICAL MODEL OF AN OCVD-BASED MEASUREMENT TECHNIQUE OFTHE LOCAL CARRIER LIFETIME 91
Polymer Processing in OLED Application 91
Electrical Characterization of Very Thin Si Epitaxial Layers used for Bipolar VLSI 90
A model of the off-behaviour of 4H–SiC power JFETs 89
Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell 88
Temperature Dependency of the Forward Characteristics of 4H-SiC DMOSFETin Presence of SiO2/SiC Interface Traps 84
Electrical Characterization of Minority Carrier Recombination Phenomena in Silicon 82
The effect of ITO surface energy on OLED electrical porperties 81
Blue electroluminescence from films of poly(n-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 80
Extension of the TPA Method for the Exact Analysis of Feedback Circuits in Terms of the Return Ratio 79
Analytical Model of GaAs BMFET Structures 79
Physical Model, Measurement set-up and experiments of a Measurement technique of the carrier lifetime Profile in Power devices 77
On the analogy of the potential barrier of trenched JFET and JBS devices 77
Analysis of a New Test Structures for Carrier-Carrier Scattering Mobilities versus Injection Level in Silicon 76
A Measurement method of the ideal I-V characteristics of diodes up to the built-in voltage limit 76
AZO CONTAINING POLYMER AS ACTIVE LAYERIN MEMORY CELLS PROTOTYPES 76
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 75
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 74
Experimental measurements of Majority and Minority Carrier Lifetime Profile in Si- epilayers by the use of an improved OCVD method 74
Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures 74
Test structure Design for the Evaluation of Carrier-Carrier Scattering Effect on Hole and Electron Mobilities 73
An Analytical Model for p+-n-n+ (n+-p-p+) Epitaxial Diodes Valid from Low to High Injection Levels 73
On the Electrical Behavior of V2O5/4H-SiC Schottky Diodes 73
LIMITATIONS OF THE OPEN-CIRCUIT VOLTAGE DECAY TECHNIQUE APPLIED TO 4H-SIC DIODES 73
Stability of amorphous silicon films and a-Si:H/c-Si heterojunctions under high energy particle irradiation 72
On the Crossing-Point of 4H-SiC Power Diodes Chararacteristics 72
A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature 71
Blue electroluminescence from films of poly(N-vinylcarbazole) and new segmented polyethers containing the oxadiazole unit 70
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs 70
Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates 69
An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current 69
Analytical Model for GaAs PIN diodes for a Wide Range of Currents and Temperatures 68
Modelling and characterisation of the input I-V curves of the Bipolar Jfet structures showing a negative Resistance behaviour 67
A 50W, 50MHz Conductivity Controlled Transistor 67
Current Gain Enhancement Effect by Gate Doping in Bipolar Mode Field Effect Transistor 66
A Measurement Method of the Injection Level Dependence of the Conductivity Mobility in Silicon 66
Experimental Characterization of the Effective Recombination Velocity at the High-Low Transition of BSF Silicon Solar Cells 66
A new Measurement Technique for the Conductivity Mobility versus Injection Level in Silicon 65
A New Method for the Measurement of the Conductivity Mobility as a Function of the Injection Level in Silicon Regions 65
A Two-dimensional Analytical Model of Homojunction GaAs BMFET Structures 64
An Analysis of Thermal Behaviour of Bipolar-Mode JFET's 64
Two-Port Analysis of Feedback Circuits in Terms of the Return Ratio 64
A Quasi-one Dimensional Analysis of Vertical JFET Device Operated in the Bipolar Mode 63
Investigation of 4H-SiC Bipolar Mode Field Effect Transistor (BMFET) as High Power Transistor 62
Modeling and Characterization of the OCVD Response at an Arbitrary Time and Injection Level 61
Recombination Lifetime Profiling in Very Thin Silicon Epitaxial Layers used for Bipolar VLSI 61
Analytical Model of the Effective Recombination Velocity of Diffused p-p+ (n-n+) High-Low Junctions at Artbitrary Injection Level 60
Characterization of Very Thin Epitaxial Layers 60
A New Test Structure for in-depth Lifetime Profiling of Thin Si Epitaxial Layers 58
Power Handling Capabilities of a New Device: the Conductivity Controlled Transistor 58
Numerical simulations of a 4H-SiC BMFET power transistors with normally-off characteristics 56
Experimental Detection of Module Failure in Large Photovoltaic Arrays: Application to the Delphos Photovoltaic Plant 56
Dispositivi per la conversione termofotovoltaica 56
Recombination Measurement of n-type Heavily Doped Layer in High-Low Silicon Junctions 55
A New Test Structure for Recombination Measurements in Thin Silicon Layers for VLSI Structures 55
Experimental Analysis of the Temperature Dependence of the S.H.R. Lifetime and of the Apparent Bandgap Narrowing in n-type Silicon 55
Modello Analitico dei diodi P+-N-N+ alle Medie Correnti 54
A New Test Structure for the Evaluation of the Injection - Level Dependence of Carrier Mobilities 54
Electrical Characterization of Polysilicon/Monosilicon Interfaces 54
Realization of a Normally-off Power Biopolar Mode JFET's 53
Measurement of the Effective Recombination Velocity of Semiconductor High-Low Transitions 52
On the Saturation Voltage of Bipolar Mode Vertical Jfet's 52
Performance analysis of a normally-off 4H-SiC trench bipolar-mode FET for power applications 50
Electrical Characterization of Minority Carrier Recombination at the Polysilicon/Silicon Interface 49
Drain Current Optimization for a Very High Voltage Fast Switch Device with Bipolar Mode Jfet Structure 49
Electrical Characterization of minority carrier transport parameters in n-type heavily doped silicon 48
Efficient low temperature cSi surface passivation using aSi grown by PECVD 47
Comments on Direct Experimental Determination of Voltage Across High-Low Junctions 45
Detection of Recombination Centers in Epitaxial Layers by Temperature Scanning and Depth Lifetime Profiling 45
On-State Modeling of Power JFET Structures in the Bipolar Mode 45
Electrical Characteristics of the Conductivity Controlled Transistor as a Power Device Structure 44
Electrical Measurement of Electron and Hole Mobilities as a Function of Injection Level in Silicon 43
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by means of a Special Test Structure 41
High-Voltage Bipolar Model JFET with normally-off Characteristics 39
Totale 7.539
Categoria #
all - tutte 17.510
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 17.510


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20198 0 0 0 0 0 0 0 0 0 0 0 8
2019/2020890 266 18 103 5 96 7 101 3 102 53 124 12
2020/2021982 5 96 96 0 105 12 99 0 94 0 101 374
2021/2022692 0 0 4 2 18 22 9 19 100 92 136 290
2022/20231.285 117 93 22 159 159 269 25 165 196 1 50 29
2023/2024254 44 66 18 10 18 26 8 9 0 14 24 17
Totale 7.539