Current–voltage under illumination and quantum yield characteristics of an amorphous silicon/crystalline silicon hetero solar cell have been measured before and after exposure to high-energy (1.7 MeV) protons. A comparison of the measured wavelength-dependent quantum yield with calculated values enabled to determine the effective electron diffusion length of the crystalline silicon, that dropped from a value of 434um before to a value of 4um after irradiation with 5x10e12 cm^2 protons. Good agreement has been obtained between measured and simulated data using DIFFIN, a finite-element simulation program for a-Si:H/c-Si heterojunction solar cells, enabling us to extract the depth profile of the recombination rate and the density of states distribution in the semiconductor layers before and after irradiation.
Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell
NEITZERT, Heinrich Christoph;BELLONE, Salvatore;LICCIARDO, GIAN DOMENICO;
2004
Abstract
Current–voltage under illumination and quantum yield characteristics of an amorphous silicon/crystalline silicon hetero solar cell have been measured before and after exposure to high-energy (1.7 MeV) protons. A comparison of the measured wavelength-dependent quantum yield with calculated values enabled to determine the effective electron diffusion length of the crystalline silicon, that dropped from a value of 434um before to a value of 4um after irradiation with 5x10e12 cm^2 protons. Good agreement has been obtained between measured and simulated data using DIFFIN, a finite-element simulation program for a-Si:H/c-Si heterojunction solar cells, enabling us to extract the depth profile of the recombination rate and the density of states distribution in the semiconductor layers before and after irradiation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
