We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use x-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission (FE) current from the GeSn-nanoparticles, with turn on field of ##IMG## [http://ej.iop.org/images/0957-4484/27/48/485707/nanoaa44f8ieqn1.gif] $65\,\,\rmV\,\mu \rmm^-\rm1$ and field enhancement factor β ∼ 100 at anode–cathode distance of ∼0.6 μ m. We prove that FE can be enhanced by preventing GeSn nanoparticles oxidation or by breaking the oxide layer through electrical stress. Finally, we show that GeSn/p–Si junctions have a rectifying behavior.

Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays

DI BARTOLOMEO, Antonio;
2016-01-01

Abstract

We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use x-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission (FE) current from the GeSn-nanoparticles, with turn on field of ##IMG## [http://ej.iop.org/images/0957-4484/27/48/485707/nanoaa44f8ieqn1.gif] $65\,\,\rmV\,\mu \rmm^-\rm1$ and field enhancement factor β ∼ 100 at anode–cathode distance of ∼0.6 μ m. We prove that FE can be enhanced by preventing GeSn nanoparticles oxidation or by breaking the oxide layer through electrical stress. Finally, we show that GeSn/p–Si junctions have a rectifying behavior.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4675573
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