We show that curvature-induced inhomogeneous strain distributions in nanoscale buckled semiconducting ribbons lead to the existence of end states which are topologically protected by inversion symmetry. These end-state doublets, corresponding to the so-called Maue-Shockley states, are robust against weak disorder. By identifying and calculating the corresponding topological invariants, we further show that a buckled semiconducting ribbon undergoes topological phase transitions between trivial and nontrivial insulating phases by varying its real-space geometry.
Topological end states due to inhomogeneous strains in wrinkled semiconducting ribbons
Ortix, Carmine
2016-01-01
Abstract
We show that curvature-induced inhomogeneous strain distributions in nanoscale buckled semiconducting ribbons lead to the existence of end states which are topologically protected by inversion symmetry. These end-state doublets, corresponding to the so-called Maue-Shockley states, are robust against weak disorder. By identifying and calculating the corresponding topological invariants, we further show that a buckled semiconducting ribbon undergoes topological phase transitions between trivial and nontrivial insulating phases by varying its real-space geometry.File in questo prodotto:
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