We show that curvature-induced inhomogeneous strain distributions in nanoscale buckled semiconducting ribbons lead to the existence of end states which are topologically protected by inversion symmetry. These end-state doublets, corresponding to the so-called Maue-Shockley states, are robust against weak disorder. By identifying and calculating the corresponding topological invariants, we further show that a buckled semiconducting ribbon undergoes topological phase transitions between trivial and nontrivial insulating phases by varying its real-space geometry.
|Titolo:||Topological end states due to inhomogeneous strains in wrinkled semiconducting ribbons|
|Data di pubblicazione:||2016|
|Appare nelle tipologie:||1.1 Articoli su Rivista|