We establish theoretically that in nonmagnetic semiconducting bilayer or multilayer thin film systems rolled up into compact quasi-one-dimensional nanoarchitectures, the ballistic magnetoresistance is very anisotropic: conductances depend strongly on the direction of an externally applied magnetic field. This phenomenon originates from the curved open geometry of rolled-up nanotubes, which leads to a tunability of the number of quasi-one-dimensional magnetic subbands crossing the Fermi energy. The experimental significance of this phenomenon is illustrated by a sizable anisotropy that scales with the inverse of the winding number, and persists up to a critical temperature that can be strongly enhanced by increasing the strength of the external magnetic field or the characteristic radius of curvature, and can reach room temperature.

Strongly anisotropic ballistic magnetoresistance in compact three-dimensional semiconducting nanoarchitectures

Ortix, Carmine
2014-01-01

Abstract

We establish theoretically that in nonmagnetic semiconducting bilayer or multilayer thin film systems rolled up into compact quasi-one-dimensional nanoarchitectures, the ballistic magnetoresistance is very anisotropic: conductances depend strongly on the direction of an externally applied magnetic field. This phenomenon originates from the curved open geometry of rolled-up nanotubes, which leads to a tunability of the number of quasi-one-dimensional magnetic subbands crossing the Fermi energy. The experimental significance of this phenomenon is illustrated by a sizable anisotropy that scales with the inverse of the winding number, and persists up to a critical temperature that can be strongly enhanced by increasing the strength of the external magnetic field or the characteristic radius of curvature, and can reach room temperature.
2014
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4706817
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