We investigate the tunneling conductance of superconductor-insulator–normal metal (SIN) and superconductor-insulator-superconductor (SIS) heterostructures with one superconducting side of the junction that is electrically driven and can exhibit π pairing through a modification of the surface inversion asymmetric couplings. In SIN tunneling we find that the variation of the electrically driven interactions generally brings an increase of quasiparticles in the gap due to orbitally polarized depaired states, irrespective of the interband phase rearrangement. The peak of SIN conductance at the gap edge varies with a trend that depends both on the strength of the surface interactions as well as on the character of the gate-induced superconducting state. While this shift can be also associated with thermal effects in the SIN configuration, for the SIS geometry at low temperature the electric field does not yield the characteristic matching peak at voltages related with the difference between the gaps of the superconducting electrodes. This observation sets out a distinctive mark for spectroscopically distinguishing thermal population effects from signatures that are mainly related to a variation of the electric field. In SIS the electrostatic gating yields a variety of features with asymmetric peaks and broadening of the conductance spectral weight. These findings indicate general qualitative trends for both SIN and SIS tunneling spectroscopy which could serve for evaluating the impact of electric field on superconductors and the occurrence of noncentrosymmetric orbital antiphase pairing.

Spectroscopic signatures of gate-controlled superconducting phases

Mercaldo, Maria Teresa;Cuoco, Mario
2021-01-01

Abstract

We investigate the tunneling conductance of superconductor-insulator–normal metal (SIN) and superconductor-insulator-superconductor (SIS) heterostructures with one superconducting side of the junction that is electrically driven and can exhibit π pairing through a modification of the surface inversion asymmetric couplings. In SIN tunneling we find that the variation of the electrically driven interactions generally brings an increase of quasiparticles in the gap due to orbitally polarized depaired states, irrespective of the interband phase rearrangement. The peak of SIN conductance at the gap edge varies with a trend that depends both on the strength of the surface interactions as well as on the character of the gate-induced superconducting state. While this shift can be also associated with thermal effects in the SIN configuration, for the SIS geometry at low temperature the electric field does not yield the characteristic matching peak at voltages related with the difference between the gaps of the superconducting electrodes. This observation sets out a distinctive mark for spectroscopically distinguishing thermal population effects from signatures that are mainly related to a variation of the electric field. In SIS the electrostatic gating yields a variety of features with asymmetric peaks and broadening of the conductance spectral weight. These findings indicate general qualitative trends for both SIN and SIS tunneling spectroscopy which could serve for evaluating the impact of electric field on superconductors and the occurrence of noncentrosymmetric orbital antiphase pairing.
2021
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4770848
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